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2SA2140 PDF预览

2SA2140

更新时间: 2024-01-04 23:27:16
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管局域网
页数 文件大小 规格书
3页 73K
描述
Silicon PNP epitaxial planar type

2SA2140 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220D-A1, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.76外壳连接:ISOLATED
最大集电极电流 (IC):1.5 A集电极-发射极最大电压:180 V
配置:SINGLE最小直流电流增益 (hFE):60
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

2SA2140 数据手册

 浏览型号2SA2140的Datasheet PDF文件第2页浏览型号2SA2140的Datasheet PDF文件第3页 
Power Transistors  
2SA2140  
Silicon PNP epitaxial planar type  
Unit: mm  
4.6 0.2  
For power amplification  
For TV VM circuit  
9.9 0.3  
2.9 0.2  
φ 3.2 0.1  
Features  
Satisfactory linearity of forward current transfer ratio hFE  
High transition frequency (fT)  
Full-pack package which can be installed to the heat sink with one  
screw.  
1.4 0.2  
1.6 0.2  
2.6 0.1  
0.8 0.1  
0.55 0.15  
Absolute Maximum Ratings TC = 25°C  
2.54 0.30  
5.08 0.50  
Parameter  
Symbol  
Rating  
180  
180  
6  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
Emitter-base voltage (Collector open) VEBO  
1
2
3
1: Base  
2: Collector  
3: Emitter  
V
V
TO-220D-A1 Package  
Collector current  
IC  
ICP  
PC  
1.5  
A
Internal Connection  
Peak collector current  
Collector power dissipation  
3  
A
20  
W
C
E
Ta = 25°C  
2.0  
B
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
55 to +150  
Electrical Characteristics TC = 25°C 3°C  
Parameter  
Symbol  
VCEO  
ICBO  
Conditions  
Min  
Typ  
Max  
Unit  
V
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio *  
Collector-emitter saturation voltage  
Transition frequency  
IC = −10 mA, IB = 0  
180  
VCB = −180 V, IE = 0  
VEB = −6 V, IC = 0  
100  
100  
240  
µA  
µA  
IEBO  
hFE  
VCE = 5 V, IC = 0.1 A  
60  
VCE(sat) IC = −1 A, IB = − 0.1 A  
0.5  
V
fT  
VCE = −10 V, IC = − 0.2 A, f = 10 MHz  
100  
30  
MHz  
pF  
Collector output capacitance  
Cob  
VCB = −10 V, IE = 0, f = 1 MHz  
(Common base, input open circuited)  
Turn-on time  
Storage time  
Fall time  
ton  
tstg  
tf  
IC = − 0.4 A, Resistance loaded  
IB1 = 0.04 A, IB2 = − 0.04 A  
VCC = 100 V  
0.1  
1.0  
0.1  
µs  
µs  
µs  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Rank  
Q
P
hFE  
60 to 140  
120 to 240  
Publication date: July 2004  
SJD00316AED  
1

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