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2SA2110 PDF预览

2SA2110

更新时间: 2024-02-14 09:20:41
品牌 Logo 应用领域
松下 - PANASONIC 局域网放大器晶体管
页数 文件大小 规格书
3页 243K
描述
Power Bipolar Transistor, 0.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126B-A1, 3 PIN

2SA2110 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.84峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

2SA2110 数据手册

 浏览型号2SA2110的Datasheet PDF文件第2页浏览型号2SA2110的Datasheet PDF文件第3页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
Powor Transistors  
2SA2110  
Silicon PNP epitaxial planar type  
For low frequency power amplication  
Complementary to 2SC2590  
Package  
Code  
Features  
Extremely satisfactory linearity of the forward current transfer ratio hFE  
High transfer ratio fT  
TO-126B-A1  
Makes up a complementary pair with 2SC2590, which is optimum for thpre-  
driver stage of a 40 W to 60 W output amplier.  
Pin Nam
1. Em
2. Coll
se  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCO  
VEB
IC  
Ratin
–1
–5  
Unit  
V
V
V
– 0.5  
–1  
Peak collector current  
IC
A
Collector power dissipation  
Junction temperature  
PC  
1.
W
°C  
°C  
Tj  
150  
Storage temperature  
55 t+150  
Electrcal Cteristics Ta = 25°C±3C  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
V
ollector-mitter voltage (ase open)  
Emier-base ector open)  
VCEO IC = –100 mA, IB = 0  
VEBO IE = –10 mA, IC = 0  
–120  
–5  
V
2
*
hFE1  
hFE2  
VCE = –10 V, IC = –150 mA  
VCE = –5 V, IC = –500 mA  
90  
220  
1
Forward currenio *  
50  
100  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = –300 mA, IB = –30 mA  
VBE(sat) IC = –300 mA, IB = –30 mA  
–1.0  
–1.2  
V
V
fT  
VCB = –10 V, IE = 50 mA, f = 200 MHz  
200  
20  
MHz  
Collector output capacitance  
Cob  
VCB = –10 V, IE = 0, f = 1 MHz  
30  
pF  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. 1: Pulse measurement  
*
2: Rank classication  
*
Rank  
Q
R
hFE1  
90 to 160  
120 to 220  
Publication date : October 2008  
SJD00348AED  
1

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