This product complies with the RoHS Directive (EU 2002/95/EC).
Powor Transistors
2SA2110
Silicon PNP epitaxial planar type
For low frequency power amplification
Complementary to 2SC2590
Package
ꢀCode
Features
Extremely satisfactory linearity of the forward current transfer ratio hFE
High transfer ratio fT
TO-126B-A1
Makes up a complementary pair with 2SC2590, which is optimum for the pre-
driver stage of a 40 W to 60 W output amplifier.
ꢀPin Name
1. Emitter
2. Collector
3. Base
Absolute Maximum Ratings Ta = 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
–120
–120
–5
Unit
V
V
V
– 0.5
–1
A
Peak collector current
ICP
A
Collector power dissipation
Junction temperature
PC
1.2
W
°C
°C
Tj
150
Storage temperature
T
stg
–55 to +150
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
V
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
VCEO IC = –100 mA, IB = 0
VEBO IE = –10 mA, IC = 0
–120
–5
V
2
*
hFE1
hFE2
VCE = –10 V, IC = –150 mA
VCE = –5 V, IC = –500 mA
90
220
1
Forward current transfer ratio *
50
100
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat) IC = –300 mA, IB = –30 mA
VBE(sat) IC = –300 mA, IB = –30 mA
–1.0
–1.2
V
V
fT
VCB = –10 V, IE = 50 mA, f = 200 MHz
200
20
MHz
Collector output capacitance
Cob
VCB = –10 V, IE = 0, f = 1 MHz
30
pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. 1: Pulse measurement
*
2: Rank classification
*
Rank
Q
R
hFE1
90 to 160
120 to 220
Publication date : October 2008
SJD00348AED
1