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2SA2084 PDF预览

2SA2084

更新时间: 2024-01-07 10:19:10
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
3页 76K
描述
Silicon PNP epitaxial planar type

2SA2084 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-59包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.84最大集电极电流 (IC):0.07 A
集电极-发射极最大电压:300 V配置:SINGLE
最小直流电流增益 (hFE):60JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHz

2SA2084 数据手册

 浏览型号2SA2084的Datasheet PDF文件第2页浏览型号2SA2084的Datasheet PDF文件第3页 
Transistors  
2SA2084  
Silicon PNP epitaxial planar type  
Unit: mm  
For general amplification  
+0.10  
–0.05  
0.40  
3
+0.10  
–0.06  
0.16  
Features  
High collector-emitter voltage (Base open) VCEO  
Mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing  
1
2
(0.95) (0.95)  
Absolute Maximum Ratings Ta = 25°C  
1.9 0.1  
+0.20  
2.90  
–0.05  
Parameter  
Symbol  
Rating  
300  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
Emitter-base voltage (Collector open) VEBO  
10˚  
300  
V
5  
V
1: Base  
2: Emitter  
3: Collector  
Collector current  
IC  
ICP  
PC  
Tj  
70  
mA  
mA  
mW  
°C  
Peak collector current  
Collector power dissipation  
Junction temperature  
Storage temperature  
100  
EIAJ: SC-59  
Mini3-G1 Package  
200  
150  
Marking Symbol: 7N  
Tstg  
55 to +150  
°C  
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
VCEO  
VEBO  
hFE  
Conditions  
Min  
300  
5  
Typ  
Max  
Unit  
V
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Forward current transfer ratio *  
Collector-emitter saturation voltage  
IC = −100 µA, IB = 0  
IE = −1 µA, , IC = 0  
V
VCE = −10 V, IC = −5 mA  
30  
150  
V
VCE(sat) IC = −10 mA, IB = −1 mA  
0.6  
Collector output capacitance  
Cob  
VCB = −10 V, IE = 0, f = 1 MHz  
7
pF  
(Common base, input open circuited)  
Transition frequency  
fT  
VCB = −10 V, IE = 10 mA, f = 200 MHz  
50  
MHz  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Rank  
P
Q
hFE  
30 to 100  
60 to 150  
Publication date: January 2003  
SJC00286AED  
1

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