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2SA2078G PDF预览

2SA2078G

更新时间: 2024-02-14 13:36:12
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
3页 230K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SSMINI3-F2, 3 PIN

2SA2078G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.84最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V最小直流电流增益 (hFE):180
JESD-30 代码:R-PDSO-F3JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:Tin/Bismuth (Sn/Bi)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzBase Number Matches:1

2SA2078G 数据手册

 浏览型号2SA2078G的Datasheet PDF文件第2页浏览型号2SA2078G的Datasheet PDF文件第3页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
Transistors  
2SA2078  
Silicon PNP epitaxial planar type  
For general amplification  
Unit: mm  
+0.05  
–0.02  
+0.05  
Complementary to 2SC5846  
0.33  
0.10  
–0.02  
3
Features  
High forward current transfer ratio hFE  
SSS-Mini type package, allowing downsizing of the equipment  
and automatic insertion through the tape packing and the maga-  
zine packing.  
+0.05  
0.23  
–0.02  
1.2
5˚  
Absolute Maximum Ratings Ta = 2°C  
Parameter  
Symbl  
60  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VO  
Emitter-base voltage (CollectoVEBO  
50  
V
1 : Base  
2 : Emitter  
7  
V
3 : Collector  
SSSMini3-F1 Package  
Collector current  
IC  
ICP  
PC  
10
00  
100  
A  
mA  
mW  
°C  
Peak collector current  
Collector power dssipatio
Junction temperate  
Storage temperaure  
Marking Symbol: 7H  
125  
55 to +125  
°C  
ElecCharacterisics Ta 25°C 3°C  
Paramter  
Symbol  
VCBO  
VCEO  
VEBO  
ICBO  
Conditions  
Min  
60  
50  
7  
Typ  
Max  
Unit  
V
Cllector-base votage (Emitter pen)  
Coller voltge (Base open)  
Ee (Collector open)  
Collecturrent (Emitter open)  
Collector-emcutoff current (Base open)  
Forward current transfer ratio  
IC = −10 µA, IE = 0  
IC = −100 µA, IB = 0  
IE = −10 µA, IC = 0  
VCB = −20 V, IE = 0  
VCE = −10 V, IB = 0  
VCE = −10 V, IC = −2 mA  
V
V
0.1  
µA  
µA  
ICEO  
100  
hFE  
180  
390  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = −100 mA, IB = −10 mA  
0.2 0.5  
V
fT  
VCB = −10 V, IE = 1 mA, f = 200 MHz  
VCB = −10 V, IE = 0, f = 1 MHz  
80  
MHz  
pF  
Collector output capacitance  
Cob  
2.2  
(Common base, input open circuited)  
Note) Measuring methods are based on JAPANESE NDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: August 2003  
SJC00302AED  
1

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