This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA2078
Silicon PNP epitaxial planar type
For general amplification
Unit: mm
+0.05
–0.02
+0.05
Complementary to 2SC5846
0.33
0.10
–0.02
3
■ Features
• High forward current transfer ratio hFE
• SSS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
+0.05
1
2
0.23
–0.02
(0.40)(0.40)
0.80 0.05
1.20 0.05
5˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
−60
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
−50
V
1 : Base
2 : Emitter
−7
V
3 : Collector
SSSMini3-F1 Package
Collector current
IC
ICP
PC
Tj
−100
−200
100
mA
mA
mW
°C
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Marking Symbol: 7H
125
Tstg
−55 to +125
°C
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
−60
−50
−7
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
IC = −10 µA, IE = 0
IC = −100 µA, IB = 0
IE = −10 µA, IC = 0
VCB = −20 V, IE = 0
VCE = −10 V, IB = 0
VCE = −10 V, IC = −2 mA
V
V
− 0.1
µA
µA
ICEO
−100
hFE
180
390
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = −100 mA, IB = −10 mA
− 0.2 − 0.5
V
fT
VCB = −10 V, IE = 1 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
80
MHz
pF
Collector output capacitance
Cob
2.2
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: August 2003
SJC00302AED
1