Transistors
2SA2028
Silicon PNP epitaxial planer type
Unit: mm
For DC-DC converter
+±.1±
+±.1
–±.±
±.15
±.3
–±.±5
3
I Features
• Large current capacitance
• Low collector to emitter saturation voltage
• High-speed switching
1
2
(±.65) (±.65)
Small type package, allowing downsizing and thinning of the
•
1.3±±.1
2.±±±.2
equipment.
1±°
I Absolute Maximum Ratings Ta = 25°C
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Symbol
VCBO
VCEO
VEBO
ICP
Rating
Unit
V
1: Base
2: Emitter
3: Collector
−20
−20
V
EIAJ: SC-70
−5
−3
V
S Mini Type Package (3-pin)
A
Marking Symbol: AT
IC
−1
A
Collector power dissipation
Junction temperature
Storage temperature
PC
150
mW
°C
°C
Tj
150
Tstg
−55 to +150
I Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
hFE
Conditions
Min
−20
−20
−5
Typ
Max
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
IC = −10 µA, IE = 0
IC = −1 mA, IB = 0
V
IE = −10 µA, , IC = 0
V
Forward current transfer ratio *
Collector to emitter saturation voltage
Collector output capacitance
Transition frequency
VCE = −2 V, IC = −100 mA
IC = −200 mA, IB = −10 mA
VCB = −10 V, IE = 0, f = 1 MHz
160
560
−100
30
VCE(sat)
Cob
−40
20
mV
pF
fT
VCB = −10 V, IE = 10 mA
f=200 MHz
170
MHz
1