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2SA2009GR

更新时间: 2024-02-11 19:54:46
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
1页 46K
描述
Small Signal Bipolar Transistor, 0.02A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN

2SA2009GR 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.84其他特性:LOW NOISE
最大集电极电流 (IC):0.02 A集电极-发射极最大电压:120 V
配置:SINGLE最小直流电流增益 (hFE):360
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

2SA2009GR 数据手册

  
Transistors  
2SA2009  
Silicon PNP epitaxial planer type  
Unit: mm  
For low-frequency high breakdown voltage amplification  
+0.10  
+0.1  
–0.0  
0.15  
0.3  
–0.05  
3
I Features  
High collector to emitter voltage VCEO  
Low noise voltage NV  
1
2
(0.65) (0.65)  
1.3 0.1  
2.0 0.2  
I Absolute Maximum Ratings Ta = 25°C  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Rating  
120  
120  
5  
Unit  
V
10˚  
V
V
1: Base  
2: Emitter  
3: Collector  
50  
mA  
mA  
mW  
°C  
IC  
20  
EIAJ: SC-70  
S Mini Type Package (3-pin)  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
150  
Tj  
150  
Marking Symbol: AR  
Tstg  
55 to +150  
°C  
I Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
ICBO  
Conditions  
Min  
Typ  
Max  
100  
1  
Unit  
nA  
µA  
V
Collector cutoff current  
VCB = −50 V, IE = 0  
VCE = −50 V, IB = 0  
IC = −10 µA, IE = 0  
IC = −1 mA, IB = 0  
ICEO  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
VCBO  
VCEO  
VEBO  
hFE  
120  
120  
5  
V
IE = −10 µA, IC = 0  
VCE = −5 V, IC = −2 mA  
IC = −20 mA, IB = −2 mA  
V
Forward current transfer ratio *  
Collector to emitter saturation voltage  
Noise voltage  
180  
700  
VCE(sat)  
NV  
0.6  
V
VCE = −40 V, IC = −1 mA, GV = 80 dB  
Rg = 100 kW, Function = FLAT  
130  
120  
mV  
Transition frequency  
fT  
VCB = −5 V, IE = 2 mA, f = 200 MHz  
MHz  
Note) : Rank classification  
*
Rank  
R
S
T
hFE  
180 to 360  
260 to 520  
360 to 700  
1

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