Transistors
2SA2009
Silicon PNP epitaxial planer type
Unit: mm
For low-frequency high breakdown voltage amplification
+0.10
+0.1
–0.0
0.15
0.3
–0.05
3
I Features
• High collector to emitter voltage VCEO
• Low noise voltage NV
1
2
(0.65) (0.65)
1.3 0.1
2.0 0.2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Symbol
VCBO
VCEO
VEBO
ICP
Rating
−120
−120
−5
Unit
V
10˚
V
V
1: Base
2: Emitter
3: Collector
−50
mA
mA
mW
°C
IC
−20
EIAJ: SC-70
S Mini Type Package (3-pin)
Collector power dissipation
Junction temperature
Storage temperature
PC
150
Tj
150
Marking Symbol: AR
Tstg
−55 to +150
°C
I Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
ICBO
Conditions
Min
Typ
Max
−100
−1
Unit
nA
µA
V
Collector cutoff current
VCB = −50 V, IE = 0
VCE = −50 V, IB = 0
IC = −10 µA, IE = 0
IC = −1 mA, IB = 0
ICEO
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
VCBO
VCEO
VEBO
hFE
−120
−120
−5
V
IE = −10 µA, IC = 0
VCE = −5 V, IC = −2 mA
IC = −20 mA, IB = −2 mA
V
Forward current transfer ratio *
Collector to emitter saturation voltage
Noise voltage
180
700
VCE(sat)
NV
− 0.6
V
VCE = −40 V, IC = −1 mA, GV = 80 dB
Rg = 100 kW, Function = FLAT
130
120
mV
Transition frequency
fT
VCB = −5 V, IE = 2 mA, f = 200 MHz
MHz
Note) : Rank classification
*
Rank
R
S
T
hFE
180 to 360
260 to 520
360 to 700
1