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2SA2004

更新时间: 2024-01-31 01:49:59
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
1页 37K
描述
Silicon PNP epitaxial planer type

2SA2004 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.83
外壳连接:ISOLATED最大集电极电流 (IC):8 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):30JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:PNP
最大功率耗散 (Abs):20 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SA2004 数据手册

  
Power Transistors  
2SA2004  
Silicon PNP epitaxial planer type  
Unit: mm  
For power amplification  
4.6 0.2  
9.9 0.3  
2.9 0.2  
I Features  
φ 3.2 0.1  
High forward current transfer ratio hFE  
Satisfactory linearity of forward current transfer ratio hFE  
Dielectric breakdown voltage of the package: > 5 kV  
High-speed switching  
1.4 0.2  
1.6 0.2  
2.6 0.1  
I Absolute Maximum Ratings TC = 25°C  
0.8 0.1  
0.55 0.15  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Rating  
Unit  
V
2.54 0.30  
5.08 0.50  
60  
60  
V
1
2
3
1: Base  
2: Collector  
3: Emitter  
5  
V
16  
A
TO-220D Package  
IC  
8  
20  
A
TC = 25°C  
Ta = 25°C  
PC  
W
Collector power  
dissipation  
2.0  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
55 to +150  
I Electrical Characteristics TC = 25°C 3°C  
Parameter  
Symbol  
ICBO  
ICEO  
VCEO  
hFE1  
Conditions  
Min  
Typ  
Max  
100  
100  
Unit  
µA  
µA  
V
Collector cutoff current  
VCB = −60 V, IE = 0  
VCE = −60 V, IE = 0  
Collector to emitter voltage  
Forward current transfer ratio  
IC = −10 mA, IB = 0  
60  
100  
30  
VCE = −2 V, IC = − 0.1 A  
VCE = −2 V, IC = −5 A  
IC = −5 A, IB = − 0.25 A  
IC = −5 A, IC = − 0.25 A  
IC = −4 A, IB1 = −400 mA  
IB2 = 400 mA, VCC = 50 V  
230  
hFE2  
Collector to emitter saturation voltage  
Base to emitter saturation voltage  
Turn-on time  
VCE(sat)  
VBE(sat)  
ton  
1.2  
1.7  
0.5  
V
V
0.2  
0.1  
0.5  
µs  
µs  
µs  
Storage time  
tstg  
0.15  
1.0  
Fall time  
tf  
1

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