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2SA1982S PDF预览

2SA1982S

更新时间: 2024-02-14 12:25:09
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管
页数 文件大小 规格书
2页 40K
描述
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 50MA I(C) | SC-71

2SA1982S 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
Is Samacsys:N最大集电极电流 (IC):0.05 A
集电极-发射极最大电压:150 V配置:SINGLE
最小直流电流增益 (hFE):130JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:PNP最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

2SA1982S 数据手册

 浏览型号2SA1982S的Datasheet PDF文件第2页 
Transistor  
2SA1982  
Silicon PNP epitaxial planer type  
For low-frequency high breakdown voltage amplification  
Complementary to 2SC5346  
Unit: mm  
2.5±0.1  
1.05  
±0.05  
6.9±0.1  
4.0  
(1.45)  
0.8  
0.7  
Features  
Satisfactory foward current transfer ratio hFE collector current IC  
characteristics.  
0.65 max.  
High collector to emitter voltage VCEO  
.
Small collector output capacitance Cob.  
Makes up a complementary pair with 2SC2631, which is opti-  
mum for the pre-driver stage of a 20 to 40W output amplifier.  
0.45+00..015  
2.5±0.5 2.5±0.5  
1
2
3
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
–150  
–150  
–5  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
Note: In addition to the  
1:Emitter  
2:Collector  
3:Base  
V
lead type shown in  
the upper figure, the  
type as shown in  
the lower figure is  
also available.  
V
MT2 Type Package  
–100  
–50  
mA  
mA  
W
IC  
*
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
1
Tj  
150  
˚C  
˚C  
1.2±0.1  
Tstg  
–55~+150  
0.65  
max.  
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board  
thickness of 1.7mm for the collector portion  
+
0.1  
0.45–0.05  
(HW type)  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
VCB = –100V, IE = 0  
min  
typ  
max  
Unit  
Collector cutoff current  
–1  
µA  
V
Collector to emitter voltage  
Emitter to base voltage  
VCEO  
VEBO  
IC = –0.1mA, IB = 0  
–150  
–5  
IE = –10µA, IC = 0  
V
*1  
Forward current transfer ratio  
hFE  
VCE = –5V, IC = –10mA  
130  
330  
–1  
Collector to emitter saturation voltage VCE(sat)  
IC = –30mA, IB = –3mA  
V
VCE = –10V, IC = –1mA, GV = 80dB  
Rg = 100k, Function = FLAT  
VCB = –10V, IE = 10mA, f = 200MHz  
VCB = –10V, IE = 0, f = 1MHz  
Noise voltage  
NV  
150  
200  
300  
mV  
Transition frequency  
fT  
MHz  
pF  
Collector output capacitance  
Cob  
5
*1  
h
Rank classification  
FE  
Rank  
hFE  
R
S
130 ~ 220  
185 ~ 330  
1

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