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2SA1961 PDF预览

2SA1961

更新时间: 2024-01-06 12:09:00
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管放大器
页数 文件大小 规格书
2页 40K
描述
Silicon PNP epitaxial planer type

2SA1961 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
Is Samacsys:N最大集电极电流 (IC):0.07 A
集电极-发射极最大电压:200 V配置:SINGLE
最小直流电流增益 (hFE):60JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:PNP最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):30 MHz
Base Number Matches:1

2SA1961 数据手册

 浏览型号2SA1961的Datasheet PDF文件第2页 
Transistor  
2SA1961  
Silicon PNP epitaxial planer type  
For general amplification  
Unit: mm  
Complementary to 2SC5419  
2.5±0.1  
1.05  
±0.05  
6.9±0.1  
4.0  
(1.45)  
0.8  
0.7  
Features  
High collector to emitter voltage VCEO  
.
0.65 max.  
Absolute Maximum Ratings (Ta=25˚C)  
0.45+00..015  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
–200  
–200  
–5  
Unit  
V
2.5±0.5 2.5±0.5  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
1
2
3
V
V
– 0.1  
–70  
A
Note: In addition to the  
lead type shown in  
1:Emitter  
2:Collector  
IC  
mA  
W
˚C  
˚C  
the upper figure, the 3:Base  
*
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
1
type as shown in  
the lower figure is  
also available.  
MT2 Type Package  
Tj  
150  
Tstg  
–55 ~ +150  
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board  
thickness of 1.7mm for the collector portion  
1.2±0.1  
0.65  
max.  
+
0.1  
0.45–0.05  
(HW type)  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
VCEO  
Conditions  
IC = –100µA, IB = 0  
min  
–200  
–5  
typ  
max  
Unit  
Collector to emitter voltage  
Emitter to base voltage  
V
V
VEBO  
IE = –1µA, IC = 0  
*1  
Forward current transfer ratio  
hFE  
VCE = –10V, IC = –5mA  
IC = –50mA, IB = –5mA  
VCB = –5V, IE = 10mA, f = 200MHz  
VCB = –10V, IE = 0, f = 1MHz  
30  
150  
Collector to emitter saturation voltage VCE(sat)  
–2.5  
V
Transition frequency  
fT  
30  
7
MHz  
pF  
Collector output capacitance  
Cob  
*1  
h
Rank classification  
FE  
Rank  
hFE  
P
Q
30 ~ 100  
60 ~ 150  
1

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