5秒后页面跳转
2SA1806 PDF预览

2SA1806

更新时间: 2024-01-27 12:25:00
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 43K
描述
Silicon PNP epitaxial planer type

2SA1806 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.83
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:15 V
配置:SINGLE最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):1500 MHzBase Number Matches:1

2SA1806 数据手册

 浏览型号2SA1806的Datasheet PDF文件第2页 
Transistor  
2SA1806  
Silicon PNP epitaxial planer type  
For high speed switching  
Unit: mm  
1.6±0.15  
0.8±0.1  
0.4  
0.4  
Features  
High-speed switching.  
Low collector to emitter saturation voltage VCE(sat)  
.
1
SS-Mini type package, allowing downsizing of the equipment  
and automatic insertion through the tape packing and the maga-  
zine packing.  
3
2
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
–15  
Unit  
V
0.2±0.1  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
–15  
V
–4  
V
1:Base  
–100  
–50  
mA  
mA  
mW  
˚C  
2:Emitter  
3:Collector  
EIAJ:SC–75  
SS–Mini Type Package  
IC  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
125  
Marking symbol : AK  
Tj  
125  
Tstg  
–55 ~ +125  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
IEBO  
Conditions  
min  
typ  
max  
– 0.1  
– 0.1  
150  
Unit  
µA  
Collector cutoff current  
Emitter cutoff current  
VCB = –8V, IE = 0  
EB = –3V, IC = 0  
V
µA  
*
hFE1  
hFE2  
VCE = –1V, IC = –10mA  
VCE = –1V, IC = –1mA  
50  
30  
Forward current transfer ratio  
Collector to emitter saturation voltage VCE(sat)  
I
C = –10mA, IB = – 1mA  
– 0.1  
1500  
1
– 0.2  
V
MHz  
pF  
Transition frequency  
Collector output capacitance  
Turn-on time  
fT  
VCB = –10V, IE = 10mA, f = 200MHz  
VCB = –5V, IE = 0, f = 1MHz  
(Note 1) Next page  
800  
Cob  
ton  
toff  
tstg  
12  
ns  
Turn-off time  
(Note 1) Next page  
20  
ns  
Storage time  
(Note 1) Next page  
19  
ns  
*hFE1 Rank classification  
Rank  
hFE1  
Q
R
50 ~ 120  
AKQ  
90 ~ 150  
AKR  
Marking Symbol  
1

与2SA1806相关器件

型号 品牌 描述 获取价格 数据表
2SA1806G PANASONIC Small Signal Bipolar Transistor, 0.05A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, SSMINI

获取价格

2SA1806GR PANASONIC Small Signal Bipolar Transistor, 0.05A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, SSMINI

获取价格

2SA1806J ETC Small-signal device - Small-signal transistor

获取价格

2SA1806JQ PANASONIC 暂无描述

获取价格

2SA1806JR PANASONIC RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, PNP, ROHS COMPLIANT, S

获取价格

2SA1806Q ETC TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 50MA I(C) | SOT-416

获取价格