Transistor
2SA1791
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC4656
Unit: mm
1.6±0.15
0.8±0.1
0.4
0.4
Features
High transition frequency fT.
■
●
●
Small collector output capacitance Cob.
1
●
SS-Mini type package, allowing downsizing of the equipment
3
and automatic insertion through the tape packing and the maga-
zine packing.
2
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Ratings
–50
Unit
V
0.2±0.1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
–50
V
–5
V
1:Base
–50
mA
mW
˚C
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
Collector power dissipation
Junction temperature
Storage temperature
PC
125
Tj
125
Marking symbol : AL
Tstg
–55 ~ +125
˚C
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
– 0.1
–100
Unit
µA
µA
V
VCB = –10V, IE = 0
Collector cutoff current
ICEO
VCBO
VCEO
VEBO
hFE
VCE = –10V, IB = 0
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
IC = –10µA, IE = 0
–50
–50
–5
IC = –1mA, IB = 0
V
IE = –10µA, IC = 0
V
Forward current transfer ratio
VCE = –10V, IC = –2mA
IC = –10mA, IB = –1mA
VCB = –10V, IE = 2mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
200
500
Collector to emitter saturation voltage VCE(sat)
– 0.1
250
1.5
– 0.3
V
MHz
pF
Transition frequency
fT
Collector output capacitance
Cob
*hFE Rank classification
Rank
hFE
Q
R
200 ~ 400
ALQ
250 ~ 500
ALR
Marking Symbol
1