2SA1790JB

更新时间： 2024-01-06 05:41:06

品牌	Logo	应用领域
松下 - PANASONIC		晶体小信号双极晶体管光电二极管放大器
页数	文件大小	规格书
2页	40K
描述
Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SSMINI3-F1, SC-89, 3 PIN

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技术参数
数据手册

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2SA1790JB 技术参数

生命周期：	Obsolete	零件包装代码：	SC-89
包装说明：	SMALL OUTLINE, R-PDSO-F3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.75	风险等级：	5.77
最大集电极电流 (IC)：	0.03 A	集电极-发射极最大电压：	20 V
配置：	SINGLE	最小直流电流增益 (hFE)：	110
JESD-30 代码：	R-PDSO-F3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	PNP	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	300 MHz
Base Number Matches：	1

2SA1790JB 数据手册

Transistor

2SA1790

Silicon PNP epitaxial planer type

For high-frequency amplification

Complementary to 2SC4626

Unit: mm

1.6±0.15

0.8±0.1

0.4

Features

High transition frequency f_T.

■

●

SS-Mini type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the maga-

zine packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

–30

Unit

0.2±0.1

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

–20

–5

1:Base

–30

˚C

2:Emitter

3:Collector

EIAJ:SC–75

SS–Mini Type Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

125

T_j

125

Marking symbol : E

T_stg

–55 ~ +125

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

I_CEO

I_EBO

Conditions

min

typ

max

– 0.1

–100

–10

Unit

µA

V_CB= –10V, I_E= 0

Collector cutoff current

V_CE= –20V, I_B= 0

V_EB= –5V, I_C= 0

Emitter cutoff current

µA

Forward current transfer ratio

Transition frequency

h_FE

V_CE= –10V, I_C= 1mA

220

f_T

V_CB= –10V, I_E= 1mA, f = 200MHz

150

300

– 0.1

– 0.7

2.8

MHz

Collector to emitter saturation voltage V_CE(sat)

I_C= –10mA, I_B= –1mA

V_CE= –10V, I_C= –1mA

V_CB= –10V, I_E= 1mA, f = 5MHz

V_CB= –10V, I_E= 1mA, f = 2MHz

V_CE= –10V, I_C= –1mA

f = 10.7MHz

Base to emitter voltage

Noise figure

V_BE

Z_rb

4.0

Ω

Reverse transfer impedance

Common emitter reverse transfer

capacitance

C_re

1.2

2.0

^*h_FERank classification

Rank

h_FE

70 ~ 140

110 ~ 220

Marking Symbol

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