2SA1790G-B

更新时间： 2024-01-30 21:22:21

品牌	Logo	应用领域
松下 - PANASONIC		晶体小信号双极晶体管光电二极管放大器
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2页	40K
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2SA1790G-B 数据手册

Transistor

2SA1790

Silicon PNP epitaxial planer type

For high-frequency amplification

Complementary to 2SC4626

Unit: mm

1.6±0.15

0.8±0.1

0.4

Features

High transition frequency f_T.

■

●

SS-Mini type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the maga-

zine packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

–30

Unit

0.2±0.1

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

–20

–5

1:Base

–30

˚C

2:Emitter

3:Collector

EIAJ:SC–75

SS–Mini Type Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

125

T_j

125

Marking symbol : E

T_stg

–55 ~ +125

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

I_CEO

I_EBO

Conditions

min

typ

max

– 0.1

–100

–10

Unit

µA

V_CB= –10V, I_E= 0

Collector cutoff current

V_CE= –20V, I_B= 0

V_EB= –5V, I_C= 0

Emitter cutoff current

µA

Forward current transfer ratio

Transition frequency

h_FE

V_CE= –10V, I_C= 1mA

220

f_T

V_CB= –10V, I_E= 1mA, f = 200MHz

150

300

– 0.1

– 0.7

2.8

MHz

Collector to emitter saturation voltage V_CE(sat)

I_C= –10mA, I_B= –1mA

V_CE= –10V, I_C= –1mA

V_CB= –10V, I_E= 1mA, f = 5MHz

V_CB= –10V, I_E= 1mA, f = 2MHz

V_CE= –10V, I_C= –1mA

f = 10.7MHz

Base to emitter voltage

Noise figure

V_BE

Z_rb

4.0

Ω

Reverse transfer impedance

Common emitter reverse transfer

capacitance

C_re

1.2

2.0

^*h_FERank classification

Rank

h_FE

70 ~ 140

110 ~ 220

Marking Symbol

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