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2SA1790B PDF预览

2SA1790B

更新时间: 2024-02-10 14:14:55
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
3页 46K
描述
Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SC-75, 3 PIN

2SA1790B 技术参数

生命周期:Obsolete零件包装代码:SC-75
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.77
Is Samacsys:N最大集电极电流 (IC):0.03 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):70JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP最大功率耗散 (Abs):0.125 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
Base Number Matches:1

2SA1790B 数据手册

 浏览型号2SA1790B的Datasheet PDF文件第2页浏览型号2SA1790B的Datasheet PDF文件第3页 
Transistor  
2SA1790  
Silicon PNP epitaxial planer type  
For high-frequency amplification  
Complementary to 2SC4626  
Unit: mm  
1.6±0.15  
0.8±0.1  
0.4  
0.4  
Features  
High transition frequency fT.  
SS-Mini type package, allowing downsizing of the equipment  
1
and automatic insertion through the tape packing and the maga-  
zine packing.  
3
2
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
–30  
Unit  
V
0.2±0.1  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
–20  
V
–5  
V
1:Base  
–30  
mA  
mW  
˚C  
2:Emitter  
3:Collector  
EIAJ:SC–75  
SS–Mini Type Package  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
125  
Tj  
125  
Marking symbol : E  
Tstg  
–55 ~ +125  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
ICEO  
IEBO  
Conditions  
min  
typ  
max  
– 0.1  
–100  
–10  
Unit  
µA  
VCB = –10V, IE = 0  
Collector cutoff current  
VCE = –20V, IB = 0  
VEB = –5V, IC = 0  
Emitter cutoff current  
µA  
*
Forward current transfer ratio  
Transition frequency  
hFE  
VCE = –10V, IC = 1mA  
70  
220  
fT  
VCB = –10V, IE = 1mA, f = 200MHz  
150  
300  
– 0.1  
– 0.7  
2.8  
MHz  
V
Collector to emitter saturation voltage VCE(sat)  
IC = –10mA, IB = –1mA  
VCE = –10V, IC = –1mA  
VCB = –10V, IE = 1mA, f = 5MHz  
VCB = –10V, IE = 1mA, f = 2MHz  
VCE = –10V, IC = –1mA  
f = 10.7MHz  
Base to emitter voltage  
Noise figure  
VBE  
NF  
Zrb  
V
4.0  
60  
dB  
Reverse transfer impedance  
Common emitter reverse transfer  
capacitance  
22  
Cre  
1.2  
2.0  
pF  
*hFE Rank classification  
Rank  
hFE  
B
C
70 ~ 140  
EB  
110 ~ 220  
EC  
Marking Symbol  
1

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