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2SA1748Q PDF预览

2SA1748Q

更新时间: 2024-01-08 01:54:14
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
3页 44K
描述
Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-70, 3 PIN

2SA1748Q 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.77Is Samacsys:N
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):200
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

2SA1748Q 数据手册

 浏览型号2SA1748Q的Datasheet PDF文件第2页浏览型号2SA1748Q的Datasheet PDF文件第3页 
Transistor  
2SA1748  
Silicon PNP epitaxial planer type  
For high-frequency amplification  
Complementary to 2SC4562  
Unit: mm  
2.1±0.1  
0.425  
1.25±0.1  
0.425  
Features  
High transition frequency fT.  
1
Small collector output capacitance Cob.  
S-Mini type package, allowing downsizing of the equipment and  
3
automatic insertion through the tape packing and the magazine  
packing.  
2
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
–50  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
0.2±0.1  
–50  
V
–5  
V
1:Base  
2:Emitter  
3:Collector  
EIAJ:SC–70  
S–Mini Type Package  
–50  
mA  
mW  
˚C  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
150  
Tj  
150  
Marking symbol : AL  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
– 0.1  
–100  
Unit  
µA  
µA  
V
VCB = –10V, IE = 0  
Collector cutoff current  
ICEO  
VCBO  
VCEO  
VEBO  
hFE  
VCE = –10V, IB = 0  
IC = –10µA, IE = 0  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
–50  
–50  
–5  
IC = –1mA, IB = 0  
V
IE = –10µA, IC = 0  
V
Forward current transfer ratio  
VCE = –10V, IC = –2mA  
IC = –10mA, IB = –1mA  
200  
500  
Collector to emitter saturation voltage VCE(sat)  
– 0.1  
250  
1.5  
– 0.3  
V
MHz  
pF  
Transition frequency  
fT  
V
CB = –10V, IE = 2mA, f = 200MHz  
Collector output capacitance  
Cob  
VCB = –10V, IE = 0, f = 1MHz  
*hFE Rank classification  
Rank  
hFE  
Q
R
200 ~ 400  
ALQ  
250 ~ 500  
ALR  
Marking Symbol  
1

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