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2SA1748 PDF预览

2SA1748

更新时间: 2024-01-07 11:57:51
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
2页 38K
描述
Silicon PNP epitaxial planer type

2SA1748 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.77
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):200
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
VCEsat-Max:0.3 VBase Number Matches:1

2SA1748 数据手册

 浏览型号2SA1748的Datasheet PDF文件第2页 
Transistor  
2SA1748  
Silicon PNP epitaxial planer type  
For high-frequency amplification  
Complementary to 2SC4562  
Unit: mm  
2.1±0.1  
0.425  
1.25±0.1  
0.425  
Features  
High transition frequency fT.  
1
Small collector output capacitance Cob.  
S-Mini type package, allowing downsizing of the equipment and  
3
automatic insertion through the tape packing and the magazine  
packing.  
2
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
–50  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
0.2±0.1  
–50  
V
–5  
V
1:Base  
2:Emitter  
3:Collector  
EIAJ:SC–70  
S–Mini Type Package  
–50  
mA  
mW  
˚C  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
150  
Tj  
150  
Marking symbol : AL  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
– 0.1  
–100  
Unit  
µA  
µA  
V
VCB = –10V, IE = 0  
Collector cutoff current  
ICEO  
VCBO  
VCEO  
VEBO  
hFE  
VCE = –10V, IB = 0  
IC = –10µA, IE = 0  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
–50  
–50  
–5  
IC = –1mA, IB = 0  
V
IE = –10µA, IC = 0  
V
Forward current transfer ratio  
VCE = –10V, IC = –2mA  
IC = –10mA, IB = –1mA  
200  
500  
Collector to emitter saturation voltage VCE(sat)  
– 0.1  
250  
1.5  
– 0.3  
V
MHz  
pF  
Transition frequency  
fT  
V
CB = –10V, IE = 2mA, f = 200MHz  
Collector output capacitance  
Cob  
VCB = –10V, IE = 0, f = 1MHz  
*hFE Rank classification  
Rank  
hFE  
Q
R
200 ~ 400  
ALQ  
250 ~ 500  
ALR  
Marking Symbol  
1

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