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2SA1738TSK PDF预览

2SA1738TSK

更新时间: 2024-02-04 16:07:33
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 44K
描述
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, PNP

2SA1738TSK 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:15 V
配置:SINGLE最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):1500 MHzBase Number Matches:1

2SA1738TSK 数据手册

 浏览型号2SA1738TSK的Datasheet PDF文件第2页 
Transistor  
2SA1738  
Silicon PNP epitaxial planer type  
For high speed switching  
Unit: mm  
2.8 +00..32  
0.65±0.15  
1.5 +00..0255  
0.65±0.15  
Features  
High-speed switch (pair with 2SC3757)  
Low collector to emitter saturation voltage VCE(sat)  
.
1
2
Mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing and the magazine  
packing.  
3
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
–15  
Unit  
V
0.1 to 0.3  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
0.4±0.2  
–15  
V
–4  
V
–100  
–50  
mA  
mA  
mW  
˚C  
1:Base  
JEDEC:TO–236  
EIAJ:SC–59  
Mini Type Package  
2:Emitter  
3:Collector  
IC  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
200  
Marking symbol : AK  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
IEBO  
Conditions  
min  
typ  
max  
– 0.1  
– 0.1  
150  
Unit  
µA  
Collector cutoff current  
Emitter cutoff current  
VCB = –8V, IE = 0  
VEB = –3V, IC = 0  
µA  
*
hFE1  
hFE2  
VCE = –1V, IC = –10mA  
VCE = –1V, IC = –1mA  
IC = –10mA, IB = –1mA  
VCB = –10V, IE = 10mA, f = 200MHz  
VCB = –5V, IE = 0, f = 1MHz  
(Note 1) Next page  
50  
30  
Forward current transfer ratio  
Collector to emitter saturation voltage VCE(sat)  
– 0.1  
1500  
1
– 0.2  
V
MHz  
pF  
Transition frequency  
Collector output capacitance  
Turn-on time  
fT  
800  
Cob  
ton  
toff  
tstg  
12  
ns  
Turn-off time  
(Note 1) Next page  
20  
ns  
Storage time  
(Note 1) Next page  
19  
ns  
*hFE1 Rank classification  
Rank  
hFE1  
Q
R
50 ~ 120  
90 ~ 150  
1

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