Power Transistors
2SA1535, 2SA1535A
Silicon PNP epitaxial planar type
For low-frequency driver and high power amplification
Complementary to 2SC3944 and 2SC3944A
Unit: mm
10.0±0.2
5.5±0.2
4.2±0.2
2.7±0.2
Features
■
●
Satisfactory foward current transfer ratio hFE vs. collector cur-
rent IC characteristics
φ3.1±0.1
●
High transition frequency fT
●
Makes up a complementary pair with 2SC3944 and 2SC3944A,
which is optimum for the driver-stage of a 60 to 100W output
amplifier.
1.3±0.2
1.4±0.1
+0.2
–0.1
0.5
Absolute Maximum Ratings (T =25˚C)
■
C
0.8±0.1
Parameter
Symbol
Ratings
–150
–180
–150
–180
–5
Unit
2.54±0.25
Collector to
base voltage
Collector to
2SA1535
VCBO
V
5.08±0.5
2SA1535A
2SA1535
1
2
3
1:Base
2:Collector
3:Emitter
VCEO
V
emitter voltage 2SA1535A
Emitter to base voltage
Peak collector current
Collector current
VEBO
ICP
V
A
A
TO–220 Full Pack Package(a)
–1.5
IC
–1
TC=25°C
Ta=25°C
Collector power
dissipation
15
PC
W
2.0
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
Unit
Collector cutoff current
Collector to emitter
voltage
V
CB = –150V, IE = 0
–10
µA
2SA1535
2SA1535
2SA1535A
IC = –1mA, IB = 0
–150
–180
–5
VCEO
V
V
IC = –100µA, IB = 0
Emitter to base voltage
VEBO
IE = –10µA, IC = 0
hFE1
hFE2
*
VCE = –10V, IC = –150mA
VCE = –5V, IC = –500mA
IC = –500mA, IB = –50mA
IC = –500mA, IB = –50mA
VCE = –10V, IC = –50mA, f = 10MHz
VCB = –10V, IE = 0, f = 1MHz
90
160
100
– 0.5
–1.0
200
30
220
Forward current transfer ratio
50
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
–2.0
–2.0
V
V
Transition frequency
fT
MHz
pF
Collector output capacitance
Cob
50
*hFE1 Rank classification
Rank
hFE1
Q
R
90 to 155
130 to 220
1