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2SA1535A PDF预览

2SA1535A

更新时间: 2024-02-27 15:40:29
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管功率双极晶体管
页数 文件大小 规格书
2页 49K
描述
Silicon PNP epitaxial planar type

2SA1535A 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.6
Base Number Matches:1

2SA1535A 数据手册

 浏览型号2SA1535A的Datasheet PDF文件第2页 
Power Transistors  
2SA1535, 2SA1535A  
Silicon PNP epitaxial planar type  
For low-frequency driver and high power amplification  
Complementary to 2SC3944 and 2SC3944A  
Unit: mm  
10.0±0.2  
5.5±0.2  
4.2±0.2  
2.7±0.2  
Features  
Satisfactory foward current transfer ratio hFE vs. collector cur-  
rent IC characteristics  
φ3.1±0.1  
High transition frequency fT  
Makes up a complementary pair with 2SC3944 and 2SC3944A,  
which is optimum for the driver-stage of a 60 to 100W output  
amplifier.  
1.3±0.2  
1.4±0.1  
+0.2  
–0.1  
0.5  
Absolute Maximum Ratings (T =25˚C)  
C
0.8±0.1  
Parameter  
Symbol  
Ratings  
–150  
–180  
–150  
–180  
–5  
Unit  
2.54±0.25  
Collector to  
base voltage  
Collector to  
2SA1535  
VCBO  
V
5.08±0.5  
2SA1535A  
2SA1535  
1
2
3
1:Base  
2:Collector  
3:Emitter  
VCEO  
V
emitter voltage 2SA1535A  
Emitter to base voltage  
Peak collector current  
Collector current  
VEBO  
ICP  
V
A
A
TO–220 Full Pack Package(a)  
–1.5  
IC  
–1  
TC=25°C  
Ta=25°C  
Collector power  
dissipation  
15  
PC  
W
2.0  
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics (T =25˚C)  
C
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
Unit  
Collector cutoff current  
Collector to emitter  
voltage  
V
CB = –150V, IE = 0  
–10  
µA  
2SA1535  
2SA1535  
2SA1535A  
IC = –1mA, IB = 0  
–150  
–180  
–5  
VCEO  
V
V
IC = –100µA, IB = 0  
Emitter to base voltage  
VEBO  
IE = –10µA, IC = 0  
hFE1  
hFE2  
*
VCE = –10V, IC = –150mA  
VCE = –5V, IC = –500mA  
IC = –500mA, IB = –50mA  
IC = –500mA, IB = –50mA  
VCE = –10V, IC = –50mA, f = 10MHz  
VCB = –10V, IE = 0, f = 1MHz  
90  
160  
100  
– 0.5  
–1.0  
200  
30  
220  
Forward current transfer ratio  
50  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
–2.0  
–2.0  
V
V
Transition frequency  
fT  
MHz  
pF  
Collector output capacitance  
Cob  
50  
*hFE1 Rank classification  
Rank  
hFE1  
Q
R
90 to 155  
130 to 220  
1

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