Transistor
2SA1533
Silicon PNP epitaxial planer type
For low-frequency driver amplification
Complementary to 2SC3939
Unit: mm
5.0±0.2
4.0±0.2
Features
High collector to emitter voltage VCEO
■
●
.
●
Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
0.7±0.1
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
0.45+–00..115
1.27
0.45+–00..115
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
–80
–80
V
1.27
–5
V
–1
– 0.5
A
1:Emitter
2:Collector
3:Base
1
2 3
IC
A
2.54±0.15
Collector power dissipation
Junction temperature
Storage temperature
PC
1
W
˚C
˚C
TO–92NL Package
Tj
150
Tstg
–55 ~ +150
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
VCB = –20V, IE = 0
– 0.1
µA
V
VCBO
VCEO
VEBO
IC = –10µA, IE = 0
IC = –100µA, IB = 0
IE = –10µA, IC = 0
–80
–80
–5
V
V
*
hFE1
VCE = –10V, IC = –150mA
90
220
Forward current transfer ratio
hFE2
VCE = –5V, IC = –500mA
IC = –300mA, IB = –30mA
50
100
– 0.2
– 0.85
85
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
– 0.4
–1.2
V
V
IC = –300mA, IB = –30mA
Transition frequency
fT
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
MHz
pF
Collector output capacitance
Cob
11
20
*hFE1 Rank classification
Rank
hFE1
Q
R
90 ~ 155
130 ~ 220
1