5秒后页面跳转
2SA1532TX PDF预览

2SA1532TX

更新时间: 2024-01-01 23:01:26
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 40K
描述
Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon,

2SA1532TX 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.78
最大集电极电流 (IC):0.03 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHzBase Number Matches:1

2SA1532TX 数据手册

 浏览型号2SA1532TX的Datasheet PDF文件第2页 
Transistor  
2SA1532  
Silicon PNP epitaxial planer type  
For high-frequency amplification  
Complementary to 2SC3930  
Unit: mm  
2.1±0.1  
0.425  
1.25±0.1  
0.425  
Features  
High transition frequency fT.  
1
S-Mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing and the magazine  
packing.  
3
2
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
–30  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
–20  
V
0.2±0.1  
–5  
V
–30  
mA  
mW  
˚C  
1:Base  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
150  
2:Emitter  
3:Collector  
EIAJ:SC–70  
S–Mini Type Package  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Marking symbol : E  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
ICEO  
IEBO  
Conditions  
min  
typ  
max  
– 0.1  
–100  
–10  
Unit  
µA  
VCB = –10V, IE = 0  
Collector cutoff current  
VCE = –20V, IB = 0  
VEB = –5V, IC = 0  
Emitter cutoff current  
µA  
*
Forward current transfer ratio  
Transition frequency  
hFE  
V
CE = –10V, IC = –1mA  
70  
220  
fT  
VCB = –10V, IE = 1mA, f = 200MHz  
IC = –10mA, IB = –1mA  
150  
300  
– 0.1  
– 0.7  
2.8  
MHz  
V
Collector to emitter saturation voltage VCE(sat)  
Base to emitter voltage  
Noise figure  
VBE  
NF  
Zrb  
VCE = –10V, IC = –1mA  
V
VCB = –10V, IE = 1mA, f = 5MHz  
VCB = –10V, IE = 1mA, f = 2MHz  
4.0  
60  
dB  
Reverse transfer impedance  
Common emitter reverse transfer  
capacitance  
22  
VCE = –10V, IC = –1mA  
Cre  
1.2  
2.0  
pF  
f = 10.7MHz  
*hFE Rank classification  
Rank  
hFE  
B
C
70 ~ 140  
EB  
110 ~ 220  
EC  
Marking Symbol  
1

与2SA1532TX相关器件

型号 品牌 描述 获取价格 数据表
2SA1533 PANASONIC Silicon PNP epitaxial planer type

获取价格

2SA1533Q ETC TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 500MA I(C) | TO-92VAR

获取价格

2SA1533R ETC TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 500MA I(C) | TO-92VAR

获取价格

2SA1534 PANASONIC Silicon PNP epitaxial planer type

获取价格

2SA1534/2SA1534A ETC 2SA1534. 2SA1534A - PNP Transistor

获取价格

2SA1534A PANASONIC Silicon PNP epitaxial planer type

获取价格