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2SA1532G PDF预览

2SA1532G

更新时间: 2024-01-25 18:01:19
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
4页 280K
描述
Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN

2SA1532G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.76
最大集电极电流 (IC):0.03 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):70
JESD-30 代码:R-PDSO-F3JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:Tin/Bismuth (Sn/Bi)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHzBase Number Matches:1

2SA1532G 数据手册

 浏览型号2SA1532G的Datasheet PDF文件第2页浏览型号2SA1532G的Datasheet PDF文件第3页浏览型号2SA1532G的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
Transistors  
2SA1532G  
Silicon PNP epitaxial planar type  
For low-frequency amplification  
Complementary to 2SC3930G  
Features  
High transition frequency fT  
Pacage  
Code  
S-Mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing and te maazine  
packing  
SM
Marmbol: E  
Name  
1. Be  
2. Emitter  
3. Collector  
Absolute Maximum Ratings Ta = 2°C  
Parameter  
Symbl  
VCBO  
VO  
VEBO  
IC  
30  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base ope)  
Emitter-base voltage (Collecto
Collector current  
20  
V
5  
V
30  
A  
mW  
°C  
°C  
Collector power dissipation  
Junction temperaure  
PC  
0  
Tj  
150  
Storage temeratu
55 to +150  
ElecCharacterisics Ta 25°C 3°C  
Paramer  
Symbol  
VBE  
Conditions  
VCE = −10 µA, IC = −1 mA  
VCB = −10 V, IE = 0  
Min  
Typ  
Max  
Unit  
V
Bse-emitter satuation voltage  
Collecff curnt (Emitter open)  
Cf current (Base open)  
Emitterrrent (Collector open)  
Forward ctransfer ratio *  
Collector-emitter saturation voltage  
Transition frequency  
0.7  
ICBO  
ICEO  
0.1  
100  
10  
µA  
µA  
µA  
VCE = −20 V, IB = 0  
IEBO  
VEB = −5 V, IC = 0  
hFE  
VCE = −10 V, IC = 1 mA  
70  
220  
VCE(sat) IC = −10 mA, IB = −1 mA  
0.1  
300  
2.8  
V
fT  
VCB = −10 V, IE = 1 mA, f = 200 MHz  
150  
MHz  
dB  
Noise figure  
NF  
Zrb  
Cre  
VCB = −10 V, IE = 1 mA, f = 5 MHz  
VCB = −10 V, IE = 1 mA, f = 2 MHz  
VCB = −10 V, IE = 1 mA, f = 10.7 MHz  
4.0  
60  
Reverse transfer impedance  
22  
Common-emitter reverse transfer capacitance  
1.2  
2.0  
pF  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Rank  
B
C
hFE  
70 to 140  
110 to 220  
Publication date: July 2007  
SJC00346BED  
1

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