Transistor
2SA1323
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC3314
Unit: mm
4.0±0.2
Features
Allowing supply with the radial taping.
■
●
●
High transition frequency fT.
●
Optimum for high-density mounting.
Absolute Maximum Ratings (Ta=25˚C)
marking
■
1
2
3
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
–30
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
–20
V
1.27 1.27
–5
V
2.54±0.15
–60
mA
mA
mW
˚C
1:Emitter
2:Collector
3:Base
IC
–30
EIAJ:SC–72
New S Type Package
Collector power dissipation
Junction temperature
Storage temperature
PC
300
Tj
150
Tstg
–55 ~ +150
˚C
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
ICEO
IEBO
Conditions
min
typ
max
– 0.1
–100
–10
Unit
µA
VCB = –10V, IE = 0
Collector cutoff current
VCE = –20V, IB = 0
VEB = –5V, IC = 0
µA
Emitter cutoff current
µA
*
Forward current transfer ratio
hFE
VCE = –10V, IC = –1mA
70
220
Collector to emitter saturation voltage VCE(sat)
IC = –10mA, IB = –1mA
VCE = –10V, IC = –1mA
– 0.1
– 0.7
300
2.8
V
V
Base to emitter voltage
Transition frequency
VBE
fT
VCB = –10V, IE = 1mA, f = 200MHz
150
MHz
dB
Ω
Noise figure
NF
Zrb
Cre
VCB = –10V, IE = 1mA, f = 5MHz
VCB = –10V, IE = 1mA, f = 2MHz
VCE = –10V, IC = –1mA, f = 10.7MHz
4.0
50
Reverse transfer impedance
Common emitter reverse transfer capacitanse
22
1.2
2.0
pF
*hFE Rank classification
Rank
hFE
B
C
70 ~ 140
110 ~ 220
1