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2SA1128 PDF预览

2SA1128

更新时间: 2024-01-24 13:30:58
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 39K
描述
Silicon PNP epitaxial planer type

2SA1128 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):130JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
最大功率耗散 (Abs):0.6 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

2SA1128 数据手册

 浏览型号2SA1128的Datasheet PDF文件第2页 
Transistor  
2SA1128  
Silicon PNP epitaxial planer type  
For low-frequency output amplification  
Unit: mm  
4.0±0.2  
5.0±0.2  
Features  
Low collector to emitter saturation voltage VCE(sat)  
.
Optimum for low-voltage operation and for converter circuits.  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
–25  
Unit  
V
0.45+00..12  
0.45+00..12  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
–20  
V
1.27  
1.27  
–7  
V
–1  
A
1 2 3  
1:Emitter  
IC  
– 0.5  
600  
A
2:Collector  
3:Base  
JEDEC:TO–92  
EIAJ:SC–43A  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
mW  
˚C  
˚C  
2.54±0.15  
Tj  
150  
Tstg  
–55 ~ +150  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
–100  
–1  
Unit  
VCB = –25V, IE = 0  
nA  
µA  
V
Collector cutoff current  
ICEO  
VCE = –20V, IB = 0  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
VCBO  
VCEO  
VEBO  
IC = –10µA, IE = 0  
–25  
–20  
–7  
IC = –1mA, IB = 0  
V
IE = –10µA, IC = 0  
V
*1  
hFE1  
hFE2  
VCE = –2V, IC = –0.5A*2  
VCE = –2V, IC = –1A*2  
IC = –500mA, IB = –50mA*2  
IC = –500mA, IB = –50mA*2  
VCB = –10V, IE = 50mA, f = 200MHz  
VCB = –10V, IE = 0, f = 1MHz  
90  
220  
Forward current transfer ratio  
25  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
– 0.4  
–1.2  
V
V
Transition frequency  
fT  
150  
15  
MHz  
pF  
Collector output capacitance  
Cob  
25  
*2 Pulse measurement  
*1  
h
Rank classification  
FE  
Rank  
hFE1  
Q
R
90 ~ 155  
130 ~ 220  
Note) S Rank VCEO 18V.  
1

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