Transistor
2SA1034, 2SA1035
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SC2405 and 2SC2406
Unit: mm
Features
Low noise voltage NV.
High foward current transfer ratio hFE
■
2.8 +–00..32
1.5 +–00..0255
●
0.65±0.15
0.65±0.15
●
.
●
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
1
2
3
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
2SA1034
Symbol
Ratings
–35
Unit
Collector to
VCBO
V
base voltage
Collector to
2SA1035
2SA1034
2SA1035
–55
0.1 to 0.3
–35
0.4±0.2
VCEO
V
emitter voltage
–55
Emitter to base voltage
Peak collector current
Collector current
VEBO
ICP
IC
–5
V
mA
mA
mW
˚C
–100
–50
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Collector power dissipation
Junction temperature
Storage temperature
PC
200
Tj
150
(2SA1034)
(2SA1035)
Marking symbol : F
Tstg
–55 ~ +150
˚C
H
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
–100
–1
Unit
nA
VCB = –10V, IE = 0
Collector cutoff current
ICEO
VCE = –10V, IB = 0
µA
Collector to base
voltage
2SA1034
2SA1035
2SA1034
2SA1035
–35
–55
–35
–55
–5
VCBO
IC = –10µA, IE = 0
V
Collector to emitter
voltage
VCEO
VEBO
IC = –2mA, IB = 0
V
V
Emitter to base voltage
IE = –10µA, IC = 0
*1
Forward current transfer ratio
hFE
VCE = –5V, IC = –2mA
180
700
– 0.6
–1.0
Collector to emitter saturation voltage VCE(sat)
IC = –100mA, IB = –10mA*2
VCE = –1V, IC = –100mA*2
VCB = –5V, IE = 2mA, f = 200MHz
VCE = –10V, IC = –1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
– 0.7
200
V
V
Base to emitter voltage
Transition frequency
VBE
fT
MHz
Noise voltage
NV
150
mV
*2 Pulse measurement
*hFE1 Rank classification
Rank
hFE
R
S
T
180 ~ 360
FR
260 ~ 520
FS
360 ~ 700
FT
2SA1034
2SA1035
Marking
Symbol
HR
HS
HT
1