生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.84 |
最大集电极电流 (IC): | 0.05 A | 集电极-发射极最大电压: | 55 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 180 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 300 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SA1035_15 | KEXIN | PNP Transistors |
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|
2SA1035-HF_15 | KEXIN | PNP Transistors |
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|
2SA1035R | ETC | TRANSISTOR | BJT | PNP | 55V V(BR)CEO | 50MA I(C) | TO-236AB |
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|
2SA1035-R | KEXIN | PNP Transistors |
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|
2SA1035-R-HF | KEXIN | PNP Transistors |
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|
2SA1035S | ETC | TRANSISTOR | BJT | PNP | 55V V(BR)CEO | 50MA I(C) | TO-236AB |
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