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2SA1035 PDF预览

2SA1035

更新时间: 2024-01-26 23:07:55
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
3页 54K
描述
Silicon PNP epitaxial planer type

2SA1035 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:55 V
配置:SINGLE最小直流电流增益 (hFE):180
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHzBase Number Matches:1

2SA1035 数据手册

 浏览型号2SA1035的Datasheet PDF文件第2页浏览型号2SA1035的Datasheet PDF文件第3页 
Transistor  
2SA1034, 2SA1035  
Silicon PNP epitaxial planer type  
For low-frequency and low-noise amplification  
Complementary to 2SC2405 and 2SC2406  
Unit: mm  
Features  
Low noise voltage NV.  
High foward current transfer ratio hFE  
2.8 +00..32  
1.5 +00..0255  
0.65±0.15  
0.65±0.15  
.
Mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing and the magazine  
packing.  
1
2
3
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
2SA1034  
Symbol  
Ratings  
–35  
Unit  
Collector to  
VCBO  
V
base voltage  
Collector to  
2SA1035  
2SA1034  
2SA1035  
–55  
0.1 to 0.3  
–35  
0.4±0.2  
VCEO  
V
emitter voltage  
–55  
Emitter to base voltage  
Peak collector current  
Collector current  
VEBO  
ICP  
IC  
–5  
V
mA  
mA  
mW  
˚C  
–100  
–50  
1:Base  
2:Emitter  
3:Collector  
JEDEC:TO–236  
EIAJ:SC–59  
Mini Type Package  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
200  
Tj  
150  
(2SA1034)  
(2SA1035)  
Marking symbol : F  
Tstg  
–55 ~ +150  
˚C  
H
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
–100  
–1  
Unit  
nA  
VCB = –10V, IE = 0  
Collector cutoff current  
ICEO  
VCE = –10V, IB = 0  
µA  
Collector to base  
voltage  
2SA1034  
2SA1035  
2SA1034  
2SA1035  
–35  
–55  
–35  
–55  
–5  
VCBO  
IC = –10µA, IE = 0  
V
Collector to emitter  
voltage  
VCEO  
VEBO  
IC = –2mA, IB = 0  
V
V
Emitter to base voltage  
IE = –10µA, IC = 0  
*1  
Forward current transfer ratio  
hFE  
VCE = –5V, IC = –2mA  
180  
700  
– 0.6  
–1.0  
Collector to emitter saturation voltage VCE(sat)  
IC = –100mA, IB = –10mA*2  
VCE = –1V, IC = –100mA*2  
VCB = –5V, IE = 2mA, f = 200MHz  
VCE = –10V, IC = –1mA, GV = 80dB  
Rg = 100k, Function = FLAT  
– 0.7  
200  
V
V
Base to emitter voltage  
Transition frequency  
VBE  
fT  
MHz  
Noise voltage  
NV  
150  
mV  
*2 Pulse measurement  
*hFE1 Rank classification  
Rank  
hFE  
R
S
T
180 ~ 360  
FR  
260 ~ 520  
FS  
360 ~ 700  
FT  
2SA1034  
2SA1035  
Marking  
Symbol  
HR  
HS  
HT  
1

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