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2SA1022C PDF预览

2SA1022C

更新时间: 2024-02-24 10:07:43
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
3页 76K
描述
Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-236, SC-59, 3 PIN

2SA1022C 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.77Is Samacsys:N
最大集电极电流 (IC):0.03 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):110
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
Base Number Matches:1

2SA1022C 数据手册

 浏览型号2SA1022C的Datasheet PDF文件第2页浏览型号2SA1022C的Datasheet PDF文件第3页 
Transistors  
2SA1022  
Silicon PNP epitaxial planar type  
For high-frequency amplification  
Complementary to 2SC2295  
Unit: mm  
+0.10  
–0.05  
0.40  
+0.10  
–0.06  
0.16  
3
Features  
High frequency voltage fT  
Mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing and the magazine  
packing  
1
2
(0.95) (0.95)  
1.9 0.1  
+0.20  
2.90  
–0.05  
10˚  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
30  
Unit  
V
1: Base  
2: Emitter  
3: Collector  
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
Emitter-base voltage (Collector open) VEBO  
20  
V
EIAJ: SC-59  
Mini3-G1 Package  
5  
V
Collector current  
IC  
PC  
Tj  
30  
mA  
mW  
°C  
°C  
Marking Symbol: E  
Collector power dissipation  
Junction temperature  
Storage temperature  
200  
150  
Tstg  
55 to +150  
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Base-emitter voltage  
Symbol  
VBE  
Conditions  
VCE = −10 V, IC = −1 mA  
VCB = −10 V, IE = 0  
Min  
Typ  
Max  
Unit  
V
0.7  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio *  
Collector-emitter saturation voltage  
Transition frequency  
ICBO  
ICEO  
0.1  
100  
10  
µA  
µA  
µA  
VCE = −20 V, IB = 0  
IEBO  
VEB = −5 V, IC = 0  
hFE  
VCE = −10 V, IC = −1 mA  
70  
220  
VCE(sat) IC = −10 mA, IB = −1 mA  
0.1  
300  
2.8  
V
fT  
VCB = −10 V, IE = 1 mA, f = 200 MHz  
150  
MHz  
dB  
Noise figure  
NF  
Zrb  
Cre  
VCB = −10 V, IE = 1 mA, f = 5 MHz  
VCB = −10 V, IE = 1 mA, f = 2 MHz  
VCE = −10 V, IC = −1 mA, f = 10.7 MHz  
Reverse transfer impedance  
22  
Reverse transfer capacitance  
(Common emitter)  
1.2  
pF  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Rank  
B
C
hFE  
70 to 140  
110 to 220  
Publication date: February 2003  
SJC00009BED  
1

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