Power Transistors
2SA0914 (2SA914)
Silicon PNP epitaxial planar type
Unit: mm
+0.5
–0.1
8.0
3.2 0.2
For audio system/pli drive
φ 3.16 0.1
Complementary to 2SC1953
■ Features
• A complementary pair with 2SC1953, is optimum for the pre-
driver stage of a 60 W to 100 W output amplifier
• TO-126B package which requires no insulation plate for instal-
lation to the heat sink
■ Absolute Maximum Ratings TC = 25°C
0.75 0.1
4.6 0.2
0.5 0.1
2.3 0.2
Parameter
Symbol
Rating
−150
Unit
V
0.5 0.1
1.76 0.1
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
1: Emitter
2: Collector
3: Base
−150
V
1
2
3
−5
V
TO-126B-A1 Package
Collector current
IC
ICP
PC
Tj
−50
mA
mA
W
Peak collector current
−100
1.2
Collector power dissipation
Junction temperature
Storage temperature
150
°C
°C
Tstg
−55 to +150
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCEO
VEBO
ICBO
Conditions
Min
−150
−5
Typ
Max
Unit
V
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
IC = −100 µA, IB = 0
IE = −10 µA, IC = 0
V
VCB = −100 V, IE = 0
VCE = −5 V, IC = −10 mA
−1
330
−1
µA
hFE
130
70
VCE(sat) IC = −30 mA, IB = −3 mA
V
fT
VCB = −10 V, IE = 10 mA, f = 200 MHz
VCB = −6 V, IE = 0, f = 1 MHz
MHz
pF
Collector output capacitance
Cob
5
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
R
S
hFE
130 to 220
185 to 330
Note) The part number in the parenthesis shows conventional part number.
Publication date: December 2003
SJD00005CED
1