2SA0886

更新时间： 2024-01-18 16:10:17

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
5页	99K
描述
Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)

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2SA0886 数据手册

Power Transistors

2SA0886 (2SA886)

Silicon PNP epitaxial planar type

For low-frequency power amplification

Complementary to 2SC1847

Unit: mm

+0.5

–0.1

8.0

3.2 0.2

φ 3.16 ^0.1

■ Features

• Output of 4 W can be obtained by a complementary pair with

2SC1847

• TO-126B package which requires no insulation plate for installa-

tion to the heat sink

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

−50

Unit

0.75 0.1

4.6 0.2

0.5 0.1

2.3 0.2

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

0.5 0.1

1.76 0.1

−40

1: Emitter

2: Collector

3: Base

−5

Collector current

I_C

I_CP

P_C

T_j

−1.5

TO-126B-A1 Package

Peak collector current

−3

1.2

°C

Collector power dissipation

Junction temperature

Storage temperature

150

T_stg

−55 to +150

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

I_CBO

Conditions

Min

−50

−40

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio ^*

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

I_C= −1 mA, I_E= 0

I_C= −2 mA, I_B= 0

V_CB= −20 V, I_E= 0

V_CE= −10 V, I_B= 0

V_EB= −5 V, I_C= 0

V_CE= −5 V, I_C= −1 A

−1

µA



I_CEO

−100

−10

I_EBO

h_FE

220

V_CE(sat)I_C= −1.5 A, I_B= − 0.15 A

V_BE(sat)I_C= −2 A, I_B= − 0.2 A

−1.0

−1.5

f_T

V_CB= −5 V, I_E= 0.5 A, f = 200 MHz

V_CB= −20 V, I_E= 0, f = 1 MHz

150

MHz

Collector output capacitance

C_ob

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE1

80 to 160

120 to 220

Note) The part numbers in the parenthesis show conventional part number.

Publication date: February 2003

SJD00003BED

12 3 4 5

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