5秒后页面跳转
2SA0885 PDF预览

2SA0885

更新时间: 2024-02-06 13:35:15
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管功率双极晶体管放大器局域网
页数 文件大小 规格书
4页 65K
描述
Silicon PNP epitaxial planar type

2SA0885 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SIP包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.84Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):1 A
集电极-发射极最大电压:35 V配置:SINGLE
最小直流电流增益 (hFE):170JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):1.2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

2SA0885 数据手册

 浏览型号2SA0885的Datasheet PDF文件第2页浏览型号2SA0885的Datasheet PDF文件第3页浏览型号2SA0885的Datasheet PDF文件第4页 
Power Transistors  
2SA0885 (2SA885)  
Silicon PNP epitaxial planar type  
Unit: mm  
+0.5  
–0.1  
For low-frequency power amplification  
Complementary to 2SC1846  
8.0  
3.2 0.2  
φ 3.16 0.1  
I Features  
Output of 3 W can be obtained by a complementary pair with  
2SC1846  
TO-126B package which requires no insulation plate for installa-  
tion to the heat sink  
I Absolute Maximum Ratings TC = 25°C  
0.75 0.1  
4.6 0.2  
0.5 0.1  
2.3 0.2  
0.5 0.1  
1.76 0.1  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Rating  
45  
35  
5  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
1: Emitter  
2: Collector  
3: Base  
V
1
2
3
V
TO-126B Package  
1.5  
A
IC  
1  
A
1
Collector power dissipation  
PC  
1.2 *  
W
2
5 *  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
55 to +150  
Note) 1: Without heat sink  
*
2: With a 100 × 100 × 2 mm A1 heat sink  
*
I Electrical Characteristics TC = 25°C  
Parameter  
Symbol  
ICBO  
Conditions  
Min  
Typ  
Max  
0.1  
100  
10  
Unit  
µA  
µA  
µA  
V
Collector cutoff current  
VCB = 20 V, IE = 0  
VCE = 20 V, IB = 0  
VEB = 5V, IC = 0  
ICEO  
Emitter cutoff current  
IEBO  
Collector to base voltage  
Collector to emitter voltage  
Forward current transfer ratio  
VCBO  
VCEO  
IC = 10 µA, IE = 0  
45  
35  
85  
IC = 2 mA, IB = 0  
V
*
hFE1  
VCE = 10 V, IC = 500 mA  
VCE = 5 V, IC = 1 A  
IC = 500 mA, IB = 50 mA  
340  
0.5  
30  
hFE2  
VCE(sat)  
fT  
50  
Collector to emitter saturation voltage  
Transition frequency  
V
MHz  
pF  
VCB = 10 V, IE = 50 mA, f = 200 MHz  
VCB = 10 V, IE = 0, f = 1 MHz  
200  
20  
Collector output capacitance  
Cob  
Note) : Rank classification  
*
Rank  
Q
R
S
hFE1  
85 to 170  
120 to 240 170 to 340  
Note.) The Part number in the Parenthesis shows conventional part number.  
1

与2SA0885相关器件

型号 品牌 描述 获取价格 数据表
2SA0885(2SA885) ETC Power Device - Power Transistors - Others

获取价格

2SA0885|2SA885 ETC Power Device - Power Transistors - Others

获取价格

2SA0885Q PANASONIC TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 1A I(C) | TO-126

获取价格

2SA0885R PANASONIC TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 1A I(C) | TO-126

获取价格

2SA0885S PANASONIC TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 1A I(C) | TO-126

获取价格

2SA0886 PANASONIC Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)

获取价格