Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
5.9 0.2
4.9 0.2
For low-frequency power amplification and driver amplification
Complementary to 2SC1383, 2SC1384
■ Features
• Allowing supply with the radial taping
0.7 0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
2SA0683
2SA0684
2SA0683
2SA0684
VCBO
−30
−60
V
Collector-base voltage
(Emitter open)
+0.2
–0.1
0.45
+0.2
0.45
–0.1
(1.27)
(1.27)
VCEO
−25
V
Collector-emitter voltage
(Base open)
1: Emitter
2: Collector
3: Base
−50
1
2
3
Emitter-base voltage (Collector open) VEBO
−5
V
A
EIAJ: SC-51
2.54 0.15
TO-92L-A1 Package
Collector current
IC
ICP
PC
Tj
−1
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
−1.5
1
A
W
°C
°C
150
Tstg
−55 to +150
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
Conditions
Min
−30
−60
−25
−50
−5
Typ
Max
Unit
2SA0683
2SA0684
2SA0683
2SA0684
VCBO
IC = −10 µA, IE = 0
V
Collector-base voltage
(Emitter open)
VCEO
IC = −2 mA, IB = 0
V
Collector-emitter voltage
(Base open)
Emitter-base voltage (Collector open)
VEBO
ICBO
IE = −10 µA, IC = 0
V
µA
Collector-base cutoff current (Emitter open)
VCB = −20 V, IE = 0
− 0.1
1
2
*
Forward current transfer ratio *
hFE1
hFE2
VCE = −10 V, IC = −500 mA
VCE = −5 V, IC = −1 A
85
50
340
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat) IC = −500 mA, IB = −50 mA
VBE(sat) IC = −500 mA, IB = −50 mA
− 0.2 − 0.4
− 0.85 −1.20
200
V
V
fT
VCB = −10 V, IE = 50 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
MHz
pF
Collector output capacitance
Cob
20
30
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. 1: Pulse measurement
*
2: Rank classification
*
Rank
Q
R
S
hFE
85 to 170
120 to 240
170 to 340
Note) The part numbers in the parenthesis show conventional part number.
Publication date: February 2004
SJC00001CED
1