Datasheet > 2PG353

2PG353

更新时间： 2024-01-20 14:30:18

品牌	Logo	应用领域
松下 - PANASONIC		栅晶体管
页数	文件大小	规格书
3页	166K
描述
Insulated Gate Bipolar Transistor, 5A I(C), 400V V(BR)CES, N-Channel, U TYPE PACKAGE-3

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技术参数
数据手册

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2PG353 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PSSO-G2
针数：	3	Reach Compliance Code：	unknown
HTS代码：	8541.29.00.95	风险等级：	5.84
最大集电极电流 (IC)：	5 A	集电极-发射极最大电压：	400 V
配置：	SINGLE	JESD-30 代码：	R-PSSO-G2
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	SINGLE
晶体管元件材料：	SILICON	标称断开时间 (toff)：	850 ns
标称接通时间 (ton)：	270 ns	Base Number Matches：	1

2PG353 数据手册

IGBTs

2PG353

Insulated Gate Bipolar Transistor

■ Features

unit: mm

● High breakdown voltage: V_CES= 400V

● Allowing to control large current: I_C(peak)= 150A

● Housed in the surface mounting package

6.5±0.1

5.3±0.1

4.35±0.1

3.0±0.1

■ Applications

● For flash-light for use in a camera

■ Absolute Maximum Ratings (T_C= 25°C)

1.0±0.1

0.85±0.1

4.6±0.1

0.75±0.1

0.5±0.1

0.05 to 0.15

Parameter

Symbol

V_CES

V_GES

I_C

Ratings

Unit

Collector to emitter voltage

Gate to emitter voltage

400

±16

1: Emitter

2: Collector

3: Gate

Collector current

Pulse

Marking

I_CP

150

U Type Package

Allowable power

dissipation

T_C= 25°C

Ta = 25°C

P_C

Channel temperature

Storage temperature

T_ch

150

°C

T_stg

−55 to +150

■ Electrical Characteristics (T_C= 25°C)

Parameter

Collector to emitter cut-off current I_CES

Gate to emitter leakage current I_GES

Symbol

Conditions

V_CE= 320V, V_GE= 0

V_GE= ±12V, V_CE= 0

I_C= 1mA, V_GE= 0

min

typ

max

Unit

µA

±1

Collector to emitter breakdown voltage V_CES

400

Gate threshold voltage

Collector to emitter

saturation voltage

V_GE(th)

V_CE= 10V, I_C= 1mA

V_GE= 12V, I_C= 5A

V_CE(sat)

V_GE= 12V, I_C= 150A

V_CE= 10V, V_GE= 0, f = 1MHz

Input capacitance (Common Emitter) C_ies

1370

Turn-on time (delay time)

Rise time

t_d(on)

t_r

t_d(off)

t_f

V_CC= 300V, I_C= 130A

250

150

700

Turn-off time (delay time)

Fall time

V_GE= 12V, R_g= 25Ω

12 3

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