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2PG011 PDF预览

2PG011

更新时间: 2024-01-30 02:52:17
品牌 Logo 应用领域
松下 - PANASONIC 局域网功率控制晶体管
页数 文件大小 规格书
4页 447K
描述
Insulated Gate Bipolar Transistor, 40A I(C), 540V V(BR)CES, N-Channel, TO-220AB, TO-220D-A1, 3 PIN

2PG011 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
HTS代码:8541.29.00.95风险等级:5.81
最大集电极电流 (IC):40 A集电极-发射极最大电压:540 V
配置:SINGLEJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):385 ns
标称接通时间 (ton):685 nsBase Number Matches:1

2PG011 数据手册

 浏览型号2PG011的Datasheet PDF文件第2页浏览型号2PG011的Datasheet PDF文件第3页浏览型号2PG011的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
IGBT  
2PG011  
Silicon N-channel enhancement IGBT  
For plasma display panel drive  
For high speed switching circuits  
Features  
Package  
Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  
High-speed switching:tf = 185 ns (typ.)  
Code  
TO-220D-A1  
Pin Name  
1. Gate  
Absolute Maximum Ratings TC = 25°C  
2. Co
3. Emit
Parameter  
Collector-emitter voltage (E-B short)  
Gate-emitter voltage (E-B short)  
Collector current  
Symbol  
VCES  
VGES  
IC  
Rating  
540  
Un
V
–30 to +35  
4
V
Markig Symbol: 2PG011  
A
Peak collector current *  
IC
A
Internal Connection  
40  
W
W
°C  
°C  
C
Power dissipation  
PC  
T
T = 25°C  
a
2.0  
G
Junction temperature  
Storage temperature  
15
E
T
stg  
–55 +150  
Note) : Assurance of repetive pul. (Repeitive period ms on-dut20%)  
*
But, it must stay whin 40% oall that the time impreed pulse repetitively.  
T
5.0 On-duty 20%  
≤  
Elcical Cteristics TC 25°C±°C  
Parameter  
Collector-mitter voltage (E-B short)  
Colector-emittcurret (E-B short) *  
Gate-emittE-B short)  
Gate-emitter thrage  
Collector-emitter satation voltage  
Collector-emitter reverse break down voltage  
Short-circuit input capacitance (Common emitter)  
Short-circuit output capacitance (Common emitter)  
Reverse transfer capacitance (Common emitter)  
Gate charge load  
Symbol  
条件  
IC = 1 mA, VGE = 0  
最小  
標準  
最大  
Unit  
V
VCE
ICES  
IGES  
540  
VCE = 432 V, VGE = 0  
5.0  
±1.0  
5.5  
mA  
mA  
V
VGE = +35 V, 30 V, VCE = 0  
VGE(th) VCE = 10 V, IC = 1.0 mA  
VCE(sat) VGE = 15 V, IC = 40A  
–VCE IC = –100 mA, VG= 15 V  
Cies  
3.0  
18  
1.95  
22.5  
1210  
125  
21  
2.5  
V
V
pF  
Coes  
Cres  
Qg  
VCE = 25 V, VGE = 0, f = 1 MHz  
pF  
pF  
51  
nC  
nC  
nC  
ns  
Gate-emitter charge  
Qge  
VCC = 250 V, IC = 40A, VGE = 15 V  
9
Gate-collector charge  
Qgc  
20  
Turn-on delay time  
td(on)  
tr  
td(off)  
tf  
Rth(ch-c)  
Rth(ch-a)  
75  
Rise time  
610  
200  
185  
ns  
VCC = 250 V, IC = 40A,  
RL 6.25 , VGE = 15 V  
Turn-off delay time  
ns  
Fall time  
300  
3.13  
63  
ns  
Thermal resistance (ch-c)  
°C/W  
°C/W  
Thermal resistance (ch-a)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : ICES is 100% tested according to the ICES inspection standards. (< 1.0 mAunder the conditions of VCE = 432 V, VGE = 0)  
*
Publication date: May 2009  
SJN00008AED  
1

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