NTHS2101PT1

更新时间： 2024-02-01 21:00:51

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管开关脉冲
页数	文件大小	规格书
6页	58K
描述
−8.0 V, −7.5 A P−Channel ChipFET

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NTHS2101PT1 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	LEAD FREE, CASE 1206A-03, CHIPFET-8
针数：	8	Reach Compliance Code：	unknown
风险等级：	5.21	其他特性：	LOGIC LEVEL COMPATIBLE
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	8 V
最大漏极电流 (ID)：	5.4 A	最大漏源导通电阻：	0.025 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-XDSO-C8
JESD-609代码：	e3	元件数量：	1
端子数量：	8	工作模式：	ENHANCEMENT MODE
封装主体材料：	UNSPECIFIED	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性/信道类型：	P-CHANNEL	最大脉冲漏极电流 (IDM)：	7.5 A
认证状态：	COMMERCIAL	表面贴装：	YES
端子面层：	MATTE TIN	端子形式：	C BEND
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

NTHS2101PT1 数据手册

NTHS2101P

Power MOSFET

−8.0 V, −7.5 A P−Channel ChipFETt

Features

• Offers an Ultra Low R

Solution in the ChipFET Package

DS(on)

http://onsemi.com

• Miniature ChipFET Package 40% Smaller Footprint than TSOP−6

making it an Ideal Device for Applications where Board Space is at a

Premium

Ultra Low R

TYP

I MAX

(BR)DSS

DS(on)

• Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin

Environments such as Portable Electronics

19 mW @ −4.5 V

25 mW @ −2.5 V

34 mW @ −1.8 V

−8.0 V

−7.5 A

• Designed to Provide Low R

at Gate Voltage as Low as 1.8 V, the

DS(on)

Operating Voltage used in many Logic ICs in Portable Electronics

• Simplifies Circuit Design since Additional Boost Circuits for Gate

Voltages are not Required

• Operated at Standard Logic Level Gate Drive, Facilitating Future

Migration to Lower Levels using the same Basic Topology

• Pb−Free Package is Available

Applications

• Optimized for Battery and Load Management Applications in

Portable Equipment such as MP3 Players, Cell Phones, Digital

Cameras, Personal Digital Assistant and other Portable Applications

P−Channel MOSFET

• Charge Control in Battery Chargers

• Buck and Boost Converters

ChipFET

CASE 1206A

STYLE 1

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

−8.0

DSS

MARKING

DIAGRAM

CONNECTIONS

Gate−to−Source Voltage − Continuous

"8.0

Drain Current

− Continuous

− 5 seconds

−5.4

−7.5

Total Power Dissipation

Continuous @ T = 25°C

1.3

2.5

0.7

1.3

(5 sec) @ T = 25°C

Continuous @ 85°C

(5 sec) @ 85°C

Continuous Source Current

Thermal Resistance (Note 1)

−1.1

D4 = Specific Device Code

M = Month Code

°C/W

Junction−to−Ambient, 5 sec

Junction−to−Ambient, Continuous

ORDERING INFORMATION

†

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

260

°C

Device

Package

Shipping

NTHS2101PT1

NTHS2101PT1G

ChipFET

3000/Tape & Reel

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

ChipFET

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq

[1 oz] including traces).

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

October, 2004 − Rev. 4

NTHS2101P/D

12 3 4 5 6

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