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NP3100SAMCT3G PDF预览

NP3100SAMCT3G

更新时间： 2024-02-19 10:34:47
品牌 Logo 应用领域
安森美 - ONSEMI 触发装置硅浪涌保护器光电二极管
页数 文件大小 规格书
7页 131K
描述
50A, Ultra Low Capacitance TSPD

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NP3100SAMCT3G 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：DO-214包装说明：ROHS COMPLIANT, CASE 403C-01, SMB, 2 PIN
针数：2Reach Compliance Code：not_compliant
HTS代码：8541.30.00.80风险等级：5.74
Is Samacsys：N其他特性：UL RECOGNIZED
最大转折电压：350 V配置：SINGLE
最大断态直流电压：275 VJEDEC-95代码：DO-214AA
JESD-30 代码：R-PDSO-C2JESD-609代码：e3
湿度敏感等级：1通态非重复峰值电流：20 A
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified表面贴装：YES
端子面层：Tin (Sn)端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
触发设备类型：SILICON SURGE PROTECTORBase Number Matches：1

NP3100SAMCT3G 数据手册

 浏览型号NP3100SAMCT3G的Datasheet PDF文件第2页浏览型号NP3100SAMCT3G的Datasheet PDF文件第3页浏览型号NP3100SAMCT3G的Datasheet PDF文件第4页浏览型号NP3100SAMCT3G的Datasheet PDF文件第5页浏览型号NP3100SAMCT3G的Datasheet PDF文件第6页浏览型号NP3100SAMCT3G的Datasheet PDF文件第7页 
NP-SAMC Series  
Product Preview  
50A, Ultra Low Capacitance  
TSPD  
The NP−SAMC series of Low Capacitance Thyristor Surge  
Protection Devices (TSPD) protect sensitive electronic equipment  
from transient overvoltage conditions. Due to their ultra low off−state  
http://onsemi.com  
capacitance (C ), they offer minimal signal distortion for high speed  
o
equipment such as DSL and T1/E1 circuits. The low nominal offstate  
capacitance translates into the extremely low differential capacitance  
offering superb linearity with applied voltage or frequency.  
The NP−SAMC Series helps designers to comply with the various  
regulatory standards and recommendations including:  
GR−1089−CORE,IEC 61000−4−5, ITU K.20/K.21/K.45, IEC 60950,  
TIA−968−A, FCC Part 68, EN 60950, UL 1950.  
ULTRA LOW CAPACITANCE  
BIDIRECTIONAL SURFACE  
MOUNT THYRISTOR  
50A, 10x1000ms SURGE  
Features  
• Ultra Low − Micro Capacitance  
• Low Leakage (Transparent)  
• High Surge Current Capabilities  
• Precise Turn on Voltages  
T
R
• Low Voltage Overshoot  
• These are Pb−Free Devices  
Typical Applications  
SMB  
JEDEC DO−214AA  
CASE 403C  
• xDSL Central Office and Customer Premise  
• T1/E1  
• Other Broadband High Speed Data Transmission Equipment  
ELECTRICAL CHARACTERISTICS  
MARKING DIAGRAM  
C , 2 V,  
1 MHz  
C , 50 V,  
1 MHz  
O
O
AYWW  
xxxAMG  
G
V
V
(BO)  
DRM  
V
V
pF (Max)  
18  
pF (Max)  
Device  
NP0640SAMCT3G  
NP0720SAMCT3G  
NP0900SAMCT3G  
NP1100SAMCT3G  
NP1300SAMCT3G  
NP1500SAMCT3G  
NP1800SAMCT3G  
NP2100SAMCT3G  
NP2300SAMCT3G  
NP2600SAMCT3G  
NP3100SAMCT3G  
NP3500SAMCT3G  
"58  
"65  
"77  
"88  
8
8
8
8
8
8
8
8
8
8
8
8
A
Y
WW  
xxx  
= Assembly Location  
= Year  
= Work Week  
= Specific Device Code  
(NPxxx0SAMC)  
= Pb−Free Package  
18  
"75  
"98  
18  
"90  
"130  
"160  
"180  
"220  
"240  
"260  
"300  
"350  
"400  
18  
"120  
"140  
"170  
"180  
"190  
"220  
"275  
"320  
18  
G
(Note: Microdot may be in either location)  
18  
18  
ORDERING INFORMATION  
18  
†
18  
Device  
Package  
Shipping  
18  
NPxxx0SAMCT3G  
SMB  
(Pb−Free)  
2500 Tape &  
Reel  
18  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
18  
G in part number indicates RoHS compliance  
Other protection voltages are available upon request  
Symmetrical Protection − Values the same in both negative and positive  
excursions  
(See V−I Curve on page 3)  
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
May, 2009 − Rev. P2  
NP0640SA/D  
1234567

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