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NP0900SAMCT3G PDF预览

NP0900SAMCT3G

更新时间: 2024-02-24 11:40:08
品牌 Logo 应用领域
安森美 - ONSEMI 触发装置硅浪涌保护器光电二极管
页数 文件大小 规格书
7页 131K
描述
50A, Ultra Low Capacitance TSPD

NP0900SAMCT3G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-214包装说明:ROHS COMPLIANT, CASE 403C-01, SMB, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.30.00.80
风险等级:5.84Is Samacsys:N
其他特性:UL RECOGNIZED最大转折电压:98 V
配置:SINGLE最大断态直流电压:75 V
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
通态非重复峰值电流:20 A元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
表面贴装:YES端子面层:Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SILICON SURGE PROTECTOR
Base Number Matches:1

NP0900SAMCT3G 数据手册

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NP-SAMC Series  
Product Preview  
50A, Ultra Low Capacitance  
TSPD  
The NPSAMC series of Low Capacitance Thyristor Surge  
Protection Devices (TSPD) protect sensitive electronic equipment  
from transient overvoltage conditions. Due to their ultra low offstate  
http://onsemi.com  
capacitance (C ), they offer minimal signal distortion for high speed  
o
equipment such as DSL and T1/E1 circuits. The low nominal offstate  
capacitance translates into the extremely low differential capacitance  
offering superb linearity with applied voltage or frequency.  
The NPSAMC Series helps designers to comply with the various  
regulatory standards and recommendations including:  
GR1089CORE,IEC 6100045, ITU K.20/K.21/K.45, IEC 60950,  
TIA968A, FCC Part 68, EN 60950, UL 1950.  
ULTRA LOW CAPACITANCE  
BIDIRECTIONAL SURFACE  
MOUNT THYRISTOR  
50A, 10x1000ms SURGE  
Features  
Ultra Low Micro Capacitance  
Low Leakage (Transparent)  
High Surge Current Capabilities  
Precise Turn on Voltages  
T
R
Low Voltage Overshoot  
These are PbFree Devices  
Typical Applications  
SMB  
JEDEC DO214AA  
CASE 403C  
xDSL Central Office and Customer Premise  
T1/E1  
Other Broadband High Speed Data Transmission Equipment  
ELECTRICAL CHARACTERISTICS  
MARKING DIAGRAM  
C , 2 V,  
1 MHz  
C , 50 V,  
1 MHz  
O
O
AYWW  
xxxAMG  
G
V
V
(BO)  
DRM  
V
V
pF (Max)  
18  
pF (Max)  
Device  
NP0640SAMCT3G  
NP0720SAMCT3G  
NP0900SAMCT3G  
NP1100SAMCT3G  
NP1300SAMCT3G  
NP1500SAMCT3G  
NP1800SAMCT3G  
NP2100SAMCT3G  
NP2300SAMCT3G  
NP2600SAMCT3G  
NP3100SAMCT3G  
NP3500SAMCT3G  
"58  
"65  
"77  
"88  
8
8
8
8
8
8
8
8
8
8
8
8
A
Y
WW  
xxx  
= Assembly Location  
= Year  
= Work Week  
= Specific Device Code  
(NPxxx0SAMC)  
= PbFree Package  
18  
"75  
"98  
18  
"90  
"130  
"160  
"180  
"220  
"240  
"260  
"300  
"350  
"400  
18  
"120  
"140  
"170  
"180  
"190  
"220  
"275  
"320  
18  
G
(Note: Microdot may be in either location)  
18  
18  
ORDERING INFORMATION  
18  
18  
Device  
Package  
Shipping  
18  
NPxxx0SAMCT3G  
SMB  
(PbFree)  
2500 Tape &  
Reel  
18  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
18  
G in part number indicates RoHS compliance  
Other protection voltages are available upon request  
Symmetrical Protection Values the same in both negative and positive  
excursions  
(See VI Curve on page 3)  
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
May, 2009 Rev. P2  
NP0640SA/D  

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