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N02M0818L1AW-85I PDF预览

N02M0818L1AW-85I

更新时间: 2024-02-19 19:41:10
品牌 Logo 应用领域
AMI 静态存储器内存集成电路
页数 文件大小 规格书
9页 169K
描述
256KX8 STANDARD SRAM, 85ns, UUC, WAFER

N02M0818L1AW-85I 技术参数

生命周期:Obsolete零件包装代码:WAFER
包装说明:DIE,Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.79最长访问时间:85 ns
JESD-30 代码:X-XUUC-N内存密度:2097152 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX8封装主体材料:UNSPECIFIED
封装代码:DIE封装形状:UNSPECIFIED
封装形式:UNCASED CHIP并行/串行:PARALLEL
认证状态:Not Qualified最大供电电压 (Vsup):2.3 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:NO LEAD
端子位置:UPPERBase Number Matches:1

N02M0818L1AW-85I 数据手册

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AMI Semiconductor, Inc.  
ULP Memory Solutions  
N02M0818L1A  
670 North McCarthy Blvd. Suite 220  
Milpitas, CA 95035  
Advance Information  
PH: 408-935-7777, FAX: 408-935-7770  
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM  
256K x 8 bit  
Overview  
Features  
The N02M0818L1A is an integrated memory  
device intended for non life-support medical  
applications. This device comprises a 2 Mbit  
Static Random Access Memory organized as  
262,144 words by 8 bits. The device is designed  
and fabricated using AMI Semiconductor’s  
advanced CMOS technology with reliability  
inhancements for medical users. The device  
operates with two chip enable (CE1 and CE2)  
controls and output enable (OE) to allow for easy  
memory expansion. The N02M0818L1A is optimal  
for various applications where low-power is critical  
such as battery backup and hand-held devices.  
The device can operate over a very wide  
• Single Wide Power Supply Range  
1.4 to 2.3 Volts - STSOP package  
• Dual Power Supply - Die Only  
1.4 to 2.3 Volts - VCC  
1.4 to 3.6 Volts - VCCQ  
• Very low standby current  
200nA maximum at 2.0V and 37 deg C  
• Very low operating current  
1 mA at 2.0V and 1µs (Typical)  
• Very low Page Mode operating current  
0.5mA at 1.0V and 1µs (Typical)  
• Simple memory control  
Dual Chip Enables (CE1 and CE2)  
Output Enable (OE) for memory expansion  
o
o
temperature range of -40 C to +85 C and is  
available in JEDEC standard packages compatible  
with other standard 256Kb x 8 SRAMs  
• Low voltage data retention  
Vcc = 1.2V  
• Automatic power down to standby mode  
• Special Processing to reduce Soft Error Rate  
(SER)  
Product Family  
Standby  
Current  
Operating  
Current (Icc),  
Max  
Operating  
Power  
Part Number  
Package Type  
Speed  
Temperature Supply (Vcc)  
(ISB), Max  
N02M0818L1AN  
N02M0818L1AD  
32 - STSOP I  
Wafer  
85ns @ 1.7V  
150ns @ 1.4V  
-40oC to +85oC  
1.4V - 2.3V  
20 µA  
2.5 mA @ 1MHz  
Pin Configuration  
Pin Descriptions  
Pin Name  
A0-A17  
WE  
CE1, CE2  
OE  
Pin Function  
OE  
A11  
A9  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
A10  
CE 1  
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
V
2
Address Inputs  
Write Enable Input  
Chip Enable Input  
Output Enable Input  
Data Inputs/Outputs  
Output Power (die only)  
Power  
A8  
3
A13  
WE  
CE2  
A15  
VCC  
A17  
A16  
A14  
A12  
A7  
4
5
6
7
N02M0818L1A  
STSOP  
8
9
I/O0-I/O7  
10  
11  
12  
13  
14  
15  
16  
I/OS S2  
I/O1  
I/O0  
A0  
VCCQ  
VCC  
VSS  
A6  
A1  
Ground  
A5  
A2  
A4  
A3  
Stock No. 23208-02 09/21/06  
ADVANCE INFORMATION  
1
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.  

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