5秒后页面跳转
N02L63W3AT5IT PDF预览

N02L63W3AT5IT

更新时间: 2024-02-25 13:27:39
品牌 Logo 应用领域
安森美 - ONSEMI 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
11页 219K
描述
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16bit

N02L63W3AT5IT 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:TSOP2
包装说明:LSSOP, TSOP44,.46,32针数:44
Reach Compliance Code:not_compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.55
Is Samacsys:N最长访问时间:70 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G44
长度:18.41 mm内存密度:2097152 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
湿度敏感等级:1功能数量:1
端子数量:44字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LSSOP
封装等效代码:TSOP44,.46,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):225电源:2.5/3.3 V
认证状态:Not Qualified座面最大高度:1.25 mm
最大待机电流:0.00001 A最小待机电流:1.8 V
子类别:SRAMs最大压摆率:0.016 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

N02L63W3AT5IT 数据手册

 浏览型号N02L63W3AT5IT的Datasheet PDF文件第2页浏览型号N02L63W3AT5IT的Datasheet PDF文件第3页浏览型号N02L63W3AT5IT的Datasheet PDF文件第4页浏览型号N02L63W3AT5IT的Datasheet PDF文件第5页浏览型号N02L63W3AT5IT的Datasheet PDF文件第6页浏览型号N02L63W3AT5IT的Datasheet PDF文件第7页 
N02L63W3A  
2Mb Ultra-Low Power Asynchronous CMOS SRAM  
128K × 16bit  
Overview  
Features  
The N02L63W3A is an integrated memory device  
containing a 2 Mbit Static Random Access Memory  
organized as 131,072 words by 16 bits. The device  
is designed and fabricated using ON  
• Single Wide Power Supply Range  
2.3 to 3.6 Volts  
• Very low standby current  
2.0µA at 3.0V (Typical)  
Semiconductor’s advanced CMOS technology to  
provide both high-speed performance and ultra-low  
power. The device operates with a single chip  
enable (CE) control and output enable (OE) to  
allow for easy memory expansion. Byte controls  
(UB and LB) allow the upper and lower bytes to be  
accessed independently. The N02L63W3A is  
optimal for various applications where low-power is  
critical such as battery backup and hand-held  
devices. The device can operate over a very wide  
• Very low operating current  
2.0mA at 3.0V and 1µs (Typical)  
• Very low Page Mode operating current  
0.8mA at 3.0V and 1µs (Typical)  
• Simple memory control  
Single Chip Enable (CE)  
Byte control for independent byte operation  
Output Enable (OE) for memory expansion  
• Low voltage data retention  
o
o
temperature range of -40 C to +85 C and is  
available in JEDEC standard packages compatible  
with other standard 128Kb x 16 SRAMs.  
Vcc = 1.8V  
• Very fast output enable access time  
30ns OE access time  
• Automatic power down to standby mode  
• TTL compatible three-state output driver  
• Compact space saving BGA package avail-  
able  
Product Family  
Standby  
Power  
Supply  
(Vcc)  
Operating  
Current (Icc),  
Typical  
Operating  
Current (ISB),  
Part Number  
Package Type  
Speed  
Temperature  
Typical  
N02L63W3AB  
N02L63W3AT  
N02L63W3AB2  
N02L63W3AT2  
48 - BGA  
44 - TSOP II  
55ns @ 2.7V  
70ns @ 2.3V  
-40oC to +85oC  
2.3V - 3.6V  
2 µA  
2 mA @ 1MHz  
48 - BGA Green  
44 - TSOP II Green  
©2008 SCILLC. All rights reserved.  
July 2008 - Rev. 15  
Publication Order Number:  
N02L63W3A/D  

与N02L63W3AT5IT相关器件

型号 品牌 描述 获取价格 数据表
N02L83W2A ONSEMI 2Mb Ultra-Low Power Asynchronous CMOS SRAM 25

获取价格

N02L83W2AN25I ONSEMI 2Mb Ultra-Low Power Asynchronous CMOS SRAM 25

获取价格

N02L83W2AN25IT ONSEMI 2Mb Ultra-Low Power Asynchronous CMOS SRAM 25

获取价格

N02L83W2AN5I ONSEMI 2Mb Ultra-Low Power Asynchronous CMOS SRAM 25

获取价格

N02L83W2AN5IT ONSEMI 2Mb Ultra-Low Power Asynchronous CMOS SRAM 25

获取价格

N02L83W2AT25I ONSEMI 2Mb Ultra-Low Power Asynchronous CMOS SRAM 25

获取价格