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N02L63W2AB25I PDF预览

N02L63W2AB25I

更新时间: 2024-02-16 01:12:38
品牌 Logo 应用领域
安森美 - ONSEMI 静态存储器
页数 文件大小 规格书
11页 219K
描述
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16 bit

N02L63W2AB25I 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:LFBGA, BGA48,6X8,30
针数:48Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.55最长访问时间:70 ns
I/O 类型:COMMONJESD-30 代码:R-PBGA-B48
长度:8 mm内存密度:2097152 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:48
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:LFBGA封装等效代码:BGA48,6X8,30
封装形状:RECTANGULAR封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH
并行/串行:PARALLEL电源:3/3.3 V
认证状态:Not Qualified座面最大高度:1.34 mm
最小待机电流:1.8 V子类别:SRAMs
最大压摆率:0.016 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.3 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
宽度:6 mmBase Number Matches:1

N02L63W2AB25I 数据手册

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N02L63W2A  
2Mb Ultra-Low Power Asynchronous CMOS SRAM  
128K × 16 bit  
Features  
• Single Wide Power Supply Range  
Overview  
The N02L63W2A is an integrated memory device  
containing a 2 Mbit Static Random Access Memory  
organized as 131,072 words by 16 bits. The device  
is designed and fabricated using ON  
2.3 to 3.6 Volts  
• Very low standby current  
2.0µA at 3.0V (Typical)  
• Very low operating current  
2.0mA at 3.0V and 1µs (Typical)  
Semiconductor’s advanced CMOS technology to  
provide both high-speed performance and ultra-low  
power. The device operates with two chip enable  
(CE1 and CE2) controls and output enable (OE) to  
allow for easy memory expansion. Byte controls  
(UB and LB) allow the upper and lower bytes to be  
accessed independently and can also be used to  
deselect the device. The N02L63W2A is optimal  
for various applications where low-power is critical  
such as battery backup and hand-held devices.  
The device can operate over a very wide  
• Very low Page Mode operating current  
0.8mA at 3.0V and 1µs (Typical)  
• Simple memory control  
Dual Chip Enables (CE1 and CE2)  
Byte control for independent byte operation  
Output Enable (OE) for memory expansion  
• Low voltage data retention  
Vcc = 1.8V  
• Very fast output enable access time  
30ns OE access time  
o
o
temperature range of -40 C to +85 C and is  
available in JEDEC standard packages compatible  
with other standard 128Kb x 16 SRAMs.  
• Automatic power down to standby mode  
• TTL compatible three-state output driver  
• Compact space saving BGA package avail-  
able  
Product Family  
Standby  
Current  
Power  
Supply  
(Vcc)  
Operating  
Current (Icc),  
Typical  
Operating  
Part Number  
Package Type  
Speed  
Temperature  
(ISB), Typical  
N02L63W2AB  
N02L63W2AT  
N02L63W2AB2  
N02L63W2AT2  
48 - BGA  
44 - TSOP II  
55ns @ 2.7V  
70ns @ 2.3V  
-40oC to +85oC  
2.3V - 3.6V  
2 µA  
2 mA @ 1MHz  
48 - BGA Green  
44 - TSOP II Green  
©2008 SCILLC. All rights reserved.  
July 2008 - Rev. 9  
Publication Order Number:  
N02L63W2A/D  

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