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N02L6181AB7I PDF预览

N02L6181AB7I

更新时间: 2024-01-18 05:44:36
品牌 Logo 应用领域
安森美 - ONSEMI 存储内存集成电路静态存储器
页数 文件大小 规格书
11页 215K
描述
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit

N02L6181AB7I 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:BGA
包装说明:LFBGA, BGA48,6X8,30针数:48
Reach Compliance Code:not_compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.55
Is Samacsys:N最长访问时间:70 ns
I/O 类型:COMMONJESD-30 代码:R-PBGA-B48
长度:8 mm内存密度:2097152 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
湿度敏感等级:1功能数量:1
端子数量:48字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LFBGA
封装等效代码:BGA48,6X8,30封装形状:RECTANGULAR
封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):225电源:1.8/2 V
认证状态:Not Qualified座面最大高度:1.34 mm
最大待机电流:0.000005 A最小待机电流:1.2 V
子类别:SRAMs最大压摆率:0.017 mA
最大供电电压 (Vsup):2.2 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:6 mmBase Number Matches:1

N02L6181AB7I 数据手册

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N02L6181A  
2Mb Ultra-Low Power Asynchronous CMOS SRAM  
128Kx16 bit  
Features  
• Single Wide Power Supply Range  
1.65 to 2.2 Volts  
Overview  
• Very low standby current  
The N02L6181A is an integrated memory device  
containing a 2 Mbit Static Random Access Memory  
organized as 131,072 words by 16 bits. The device  
is designed and fabricated using ON  
0.5µA at 1.8V (Typical)  
• Very low operating current  
1.4mA at 1.8V and 1µs (Typical)  
Semiconductor’s advanced CMOS technology to  
provide both high-speed performance and ultra-low  
power. The base design is the same as ON  
• Very low Page Mode operating current  
0.5mA at 1.8V and 1µs (Typical)  
• Simple memory control  
Semiconductor’s N02L63W3A, which is processed  
to operate at higher voltages. The device operates  
with a single chip enable (CE) control and output  
enable (OE) to allow for easy memory expansion.  
Byte controls (UB and LB) allow the upper and  
lower bytes to be accessed independently. The  
N02L6181A is optimal for various applications  
where low-power is critical such as battery backup  
and hand-held devices. The device can operate  
Single Chip Enable (CE)  
Byte control for independent byte operation  
Output Enable (OE) for memory expansion  
• Low voltage data retention  
Vcc = 1.2V  
• Very fast output enable access time  
30ns OE access time  
• Automatic power down to standby mode  
• TTL compatible three-state output driver  
• Compact space saving BGA package  
o
over a very wide temperature range of -40 C to  
o
+85 C and is available in JEDEC standard  
packages compatible with other standard 128Kb x  
16 SRAMs.  
Product Family  
Standby  
Power  
Supply  
(Vcc)  
Operating  
Current (Icc),  
Max  
Operating  
Current (ISB),  
Part Number  
Package Type  
Speed  
Temperature  
Max  
N02L6181AB  
N02L6181AB2  
48 - BGA  
70 and 85ns  
@ 1.65V  
-40oC to +85oC  
1.65V - 2.2V  
10 µA  
3 mA @ 1MHz  
Green 48-BGA  
©2008 SCILLC. All rights reserved.  
July 2008 - Rev. 4  
Publication Order Number:  
N02L6181A/D  

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