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N01L83W2AT5I PDF预览

N01L83W2AT5I

更新时间: 2024-02-10 19:43:21
品牌 Logo 应用领域
安森美 - ONSEMI 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
10页 194K
描述
1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 8 bit

N01L83W2AT5I 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:TSOP1
包装说明:TSOP1, TSSOP32,.8,20针数:32
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.55
Is Samacsys:N最长访问时间:70 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G32
长度:18.4 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP32,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):225电源:3/3.3 V
认证状态:Not Qualified座面最大高度:1.25 mm
最大待机电流:0.00001 A最小待机电流:1.8 V
子类别:SRAMs最大压摆率:0.014 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:8 mmBase Number Matches:1

N01L83W2AT5I 数据手册

 浏览型号N01L83W2AT5I的Datasheet PDF文件第2页浏览型号N01L83W2AT5I的Datasheet PDF文件第3页浏览型号N01L83W2AT5I的Datasheet PDF文件第4页浏览型号N01L83W2AT5I的Datasheet PDF文件第5页浏览型号N01L83W2AT5I的Datasheet PDF文件第6页浏览型号N01L83W2AT5I的Datasheet PDF文件第7页 
N01L83W2A  
1Mb Ultra-Low Power Asynchronous CMOS SRAM  
128K × 8 bit  
Overview  
Features  
The N01L83W2A is an integrated memory device  
containing a 1 Mbit Static Random Access Memory  
organized as 131,072 words by 8 bits. The device  
is designed and fabricated using ON  
• Single Wide Power Supply Range  
2.3 to 3.6 Volts  
• Very low standby current  
2.0µA at 3.0V (Typical)  
Semiconductor’s advanced CMOS technology to  
provide both high-speed performance and ultra-low  
power. The device operates with two chip enable  
(CE1 and CE2) controls and output enable (OE) to  
allow for easy memory expansion. The  
• Very low operating current  
2.0mA at 3.0V and 1µs (Typical)  
• Very low Page Mode operating current  
0.8mA at 3.0V and 1µs (Typical)  
N01L83W2A is optimal for various applications  
where low-power is critical such as battery backup  
and hand-held devices. The device can operate  
• Simple memory control  
Dual Chip Enables (CE1and CE2)  
Output Enable (OE) for memory expansion  
o
over a very wide temperature range of -40 C to  
• Low voltage data retention  
o
+85 C and is available in JEDEC standard  
Vcc = 1.8V  
packages compatible with other standard 128Kb x  
8 SRAMs.  
• Very fast output enable access time  
30ns OE access time  
• Automatic power down to standby mode  
• TTL compatible three-state output driver  
Product Family  
Standby  
Power  
Supply  
(Vcc)  
Operating  
Current (Icc),  
Typical  
Operating  
Current (ISB),  
Part Number  
Package Type  
Speed  
Temperature  
Typical  
N01L83W2AT  
N01L83W2AN  
N01L83W2AT2  
N01L83W2AN2  
32 - TSOP I  
32 - STSOP I  
55ns @ 2.7V  
70ns @ 2.3V  
-40oC to +85oC  
2.3V - 3.6V  
2 µA  
2 mA @ 1MHz  
32 -TSOP I Green  
32 - STSOP I Green  
Pin Configuration  
Pin Descriptions  
Pin Name  
A0-A16  
WE  
CE1, CE2  
OE  
Pin Function  
OE  
A11  
A9  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
1
A10  
CE1  
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
VSS  
2
Address Inputs  
Write Enable Input  
Chip Enable Input  
Output Enable Input  
Data Inputs/Outputs  
Power  
Ground  
Not Connected  
A8  
3
A13  
WE  
CE2  
A15  
VCC  
4
5
6
32-Pin  
STSOP-I  
TSOP-I  
7
8
9
NC  
A16  
A14  
A12  
A7  
I/O0-I/O7  
I/O2  
I/O1  
I/O0  
A0  
10  
11  
12  
13  
14  
15  
16  
VCC  
VSS  
NC  
A1  
A6  
A2  
A5  
A3  
A4  
©2008 SCILLC. All rights reserved.  
July 2008 - Rev. 10  
Publication Order Number:  
N01L83W2A/D  

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