5秒后页面跳转
N01L63W3AT25IT PDF预览

N01L63W3AT25IT

更新时间: 2024-01-19 21:45:45
品牌 Logo 应用领域
安森美 - ONSEMI 静态存储器
页数 文件大小 规格书
10页 216K
描述
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K × 16 bit

N01L63W3AT25IT 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:LSSOP, TSOP44,.46,32
针数:44Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.53最长访问时间:70 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G44
长度:18.41 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:44
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:64KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:LSSOP封装等效代码:TSOP44,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
并行/串行:PARALLEL电源:3/3.3 V
认证状态:Not Qualified座面最大高度:1.25 mm
最大待机电流:0.00001 A最小待机电流:1.8 V
子类别:SRAMs最大压摆率:0.014 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL宽度:10.16 mm
Base Number Matches:1

N01L63W3AT25IT 数据手册

 浏览型号N01L63W3AT25IT的Datasheet PDF文件第2页浏览型号N01L63W3AT25IT的Datasheet PDF文件第3页浏览型号N01L63W3AT25IT的Datasheet PDF文件第4页浏览型号N01L63W3AT25IT的Datasheet PDF文件第5页浏览型号N01L63W3AT25IT的Datasheet PDF文件第6页浏览型号N01L63W3AT25IT的Datasheet PDF文件第7页 
N01L63W3A  
1Mb Ultra-Low Power Asynchronous CMOS SRAM  
64K × 16 bit  
Features  
• Single Wide Power Supply Range  
Overview  
The N01L63W3A is an integrated memory device  
containing a 1 Mbit Static Random Access Memory  
organized as 65,536 words by 16 bits. The device  
is designed and fabricated using ON  
2.3 to 3.6 Volts  
• Very low standby current  
2.0µA at 3.0V (Typical)  
• Very low operating current  
2.0mA at 3.0V and 1µs (Typical)  
Semiconductor’s advanced CMOS technology to  
provide both high-speed performance and ultra-low  
power. The device operates with a single chip  
enable (CE) control and output enable (OE) to  
allow for easy memory expansion. Byte controls  
(UB and LB) allow the upper and lower bytes to be  
accessed independently. The N01L63W3A is  
optimal for various applications where low-power is  
critical such as battery backup and hand-held  
devices. The device can operate over a very wide  
• Very low Page Mode operating current  
0.8mA at 3.0V and 1µs (Typical)  
• Simple memory control  
Single Chip Enable (CE)  
Byte control for independent byte operation  
Output Enable (OE) for memory expansion  
• Low voltage data retention  
Vcc = 1.8V  
• Very fast output enable access time  
o
o
30ns OE access time  
temperature range of -40 C to +85 C and is  
available in JEDEC standard packages compatible  
with other standard 64Kb x 16 SRAMs.  
• Automatic power down to standby mode  
• TTL compatible three-state output driver  
• Compact space saving BGA package avail-  
able  
Product Family  
Standby  
Power  
Supply  
(Vcc)  
Operating  
Current (Icc),  
Typical  
Operating  
Current (ISB),  
Part Number  
Package Type  
Speed  
Temperature  
Typical  
N01L63W3AB  
N01L63W3AT  
N01L63W3AB2  
N01L63W3AT2  
48 - BGA  
44 - TSOP II  
55ns @ 2.7V  
70ns @ 2.3V  
-40oC to +85oC  
2.3V - 3.6V  
2 µA  
2 mA @ 1MHz  
48 - BGA Green  
44 - TSOP II Green  
Pin Configurations  
Pin Descriptions  
1
2
3
A0  
A3  
4
A1  
A4  
A6  
A7  
NC  
5
A2  
6
A4  
1
PIN  
A5  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
A3  
2
ONE  
A6  
A2  
3
LB  
OE  
NC  
A7  
A
B
C
D
E
F
A1  
4
OE  
Pin Name  
A0-A15  
Pin Function  
A0  
5
UB  
I/O8  
I/O0  
UB  
CE  
CE  
6
LB  
Address Inputs  
Write Enable Input  
Chip Enable Input  
Output Enable Input  
Lower Byte Enable Input  
Upper Byte Enable Input  
Data Inputs/Outputs  
Not Connected  
I/O0  
I/O1  
I/O2  
I/O3  
VCC  
VSS  
I/O4  
I/O5  
I/O6  
I/O7  
WE  
A15  
A14  
A13  
A12  
NC  
7
I/O15  
I/O14  
I/O13  
I/O12  
VSS  
VCC  
I/O11  
I/O10  
I/O9  
I/O8  
NC  
I/O9 I/O10 A5  
I/O1 I/O2  
I/O3 VCC  
I/O4 VSS  
8
WE  
CE  
OE  
LB  
UB  
9
VSS I/O11  
VCC I/O12  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
NC  
NC  
I/O14 I/O13 A14  
A15 I/O5 I/O6  
I/O15  
NC  
A12  
A9  
A13  
A10  
I/O7  
NC  
NC  
A8  
WE  
A11  
G
H
A8  
I/O0-I/O15  
A9  
A10  
A11  
NC  
VCC  
VSS  
48 Pin BGA (top)  
6 x 8 mm  
NC  
Power  
Ground  
©2008 SCILLC. All rights reserved.  
July 2008 - Rev. 9  
Publication Order Number:  
N01L63W3A/D  

与N01L63W3AT25IT相关器件

型号 品牌 描述 获取价格 数据表
N01L63W3AT5I ONSEMI 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64

获取价格

N01L63W3AT5IT ONSEMI 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64

获取价格

N01L83W2A ONSEMI 1Mb Ultra-Low Power Asynchronous CMOS SRAM 12

获取价格

N01L83W2AN25I ONSEMI 1Mb Ultra-Low Power Asynchronous CMOS SRAM 12

获取价格

N01L83W2AN25IT ONSEMI 1Mb Ultra-Low Power Asynchronous CMOS SRAM 12

获取价格

N01L83W2AN5I ONSEMI 1Mb Ultra-Low Power Asynchronous CMOS SRAM 12

获取价格