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MMT08B350T3

更新时间： 2024-01-03 00:36:43
品牌 Logo 应用领域
安森美 - ONSEMI 触发装置硅浪涌保护器光电二极管高压
页数 文件大小 规格书
5页 58K
描述
Thyristor Surge Protectors High Voltage Bidirectional TSPD

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MMT08B350T3 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：DO-214包装说明：CASE 403C, SMT, SMB, 2 PIN
针数：2Reach Compliance Code：unknown
风险等级：5.76其他特性：UL RECOGNIZED
最大转折电压：400 V配置：SINGLE
最大断态直流电压：300 VJEDEC-95代码：DO-214AA
JESD-30 代码：R-PDSO-C2JESD-609代码：e0
湿度敏感等级：1通态非重复峰值电流：32 A
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：235
认证状态：COMMERCIAL表面贴装：YES
端子面层：TIN LEAD端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
触发设备类型：SILICON SURGE PROTECTORBase Number Matches：1

MMT08B350T3 数据手册

 浏览型号MMT08B350T3的Datasheet PDF文件第2页浏览型号MMT08B350T3的Datasheet PDF文件第3页浏览型号MMT08B350T3的Datasheet PDF文件第4页浏览型号MMT08B350T3的Datasheet PDF文件第5页 
MMT08B350T3  
Preferred Devices  
Thyristor Surge Protectors  
High Voltage Bidirectional TSPD  
These Thyristor Surge Protective devices (TSPD) prevent  
overvoltage damage to sensitive circuits by lightning, induction and  
power line crossings. They are breakover−triggered crowbar  
protectors. Turn−off occurs when the surge current falls below the  
holding current value.  
http://onsemi.com  
(
)
BIDIRECTIONAL TSPD  
80 AMP SURGE, 350 VOLTS  
Secondary protection applications for electronic telecom equipment  
at customer premises.  
Features  
• High Surge Current Capability: 80 Amps 10 x 1000 msec, for  
Controlled Temperature Environments  
MT1  
MT2  
• The MMT08B350T3 is used to help equipment meet various  
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,  
IEC 950, UL 1459 & 1950 and FCC Part 68.  
• Bidirectional Protection in a Single Device  
• Little Change of Voltage Limit with Transient Amplitude or Rate  
• Freedom from Wearout Mechanisms Present in Non−Semiconductor  
Devices  
• Fail−Safe, Shorts When Overstressed, Preventing Continued  
Unprotected Operation  
SMB  
(No Polarity)  
(Essentially JEDEC DO−214AA)  
CASE 403C  
• Surface Mount Technology (SMT)  
MARKING DIAGRAM  
•
Indicates UL Recognized − File #E210057  
• Pb−Free Package is Available  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
AYWW  
RPCM G  
G
Rating  
Symbol Value  
Unit  
V
Off−State Voltage − Maximum  
V
300  
DM  
Maximum Pulse Surge Short Circuit Current  
Non−Repetitive  
A(pk)  
Double Exponential Decay Waveform  
(−25°C Initial Temperature) (Notes 1 and 2)  
2 x 10 msec  
A
Y
WW  
= Assembly Location  
= Year  
= Work Week  
I
250  
250  
150  
150  
100  
100  
80  
PPS1  
PPS2  
PPS3  
PPS4  
PPS5  
PPS6  
PPS7  
I
I
I
I
I
I
8 x 20 msec  
10 x 160 msec  
10 x 360 msec  
10 x 560 msec  
10 x 700 msec  
10 x 1000 mse  
RPCM = Device Code  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Non−Repetitive Peak On−State Current 60 Hz  
Full Sign Wave  
I
32  
A(pk)  
TSM  
†
Device  
Package  
Shipping  
MMT08B350T3  
MMT08B350T3G  
SMB  
2500/Tape and Reel  
2500/Tape and Reel  
Maximum Non−Repetitive Rate of Change of  
On−State Current Exponential Waveform,  
< 100 A  
di/dt  
"300  
A/ms  
SMB  
(Pb−Free)  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
1. Allow cooling before testing second polarity.  
Preferred devices are recommended choices for future use  
2. Measured under pulse conditions to reduce heating.  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 1  
MMT08B350T3/D  
 
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