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MMT08B310T3 PDF预览

MMT08B310T3

更新时间: 2024-01-03 17:37:28
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 51K
描述
Thyristor Surge Protectors

MMT08B310T3 技术参数

是否无铅: 不含铅生命周期:Contact Manufacturer
零件包装代码:DO-214包装说明:LEAD FREE, CASE 403C-01, SMT, SMB, 2 PIN
针数:2Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80Factory Lead Time:1 week
风险等级:5.41其他特性:UL RECOGNIZED
最大转折电压:365 V配置:SINGLE
最大断态直流电压:270 VJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
子类别:Silicon Surge Protectors表面贴装:YES
端子面层:Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
触发设备类型:SILICON SURGE PROTECTORBase Number Matches:1

MMT08B310T3 数据手册

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MMT08B310T3  
Preferred Devices  
Thyristor Surge Protectors  
High Voltage Bidirectional TSPD  
These Thyristor Surge Protective devices (TSPD) prevent  
overvoltage damage to sensitive circuits by lightning, induction and  
power line crossings. They are breakover−triggered crowbar  
protectors. Turn−off occurs when the surge current falls below the  
holding current value.  
http://onsemi.com  
(
)
BIDIRECTIONAL TSPD  
80 AMP SURGE  
310 VOLTS  
High Surge Current Capability: 80 Amps 10 x 1000 µsec, for  
Controlled Temperature Environments  
The MMT08B310 is used to help equipment meet various regulatory  
requirements including: Bellcore 1089, ITU K.20 & K.21, IEC 950,  
UL 1459 & 1950 and FCC Part 68.  
Bidirectional Protection in a Single Device  
Little Change of Voltage Limit with Transient Amplitude or Rate  
MT1  
MT2  
Freedom from Wearout Mechanisms Present in Non−Semiconductor  
Devices  
Fail−Safe, Shorts When Overstressed, Preventing Continued  
Unprotected Operation  
Surface Mount Technology (SMT)  
SMB  
(No Polarity)  
Indicates UL Registered − File #E210057  
(Essentially JEDEC DO−214AA)  
CASE 403C  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
Off−State Voltage − Maximum  
V
DM  
V
MARKING DIAGRAM  
MMT08B310T3  
"270  
Maximum Pulse Surge Short Circuit  
Current Non−Repetitive  
Double Exponential Decay Waveform  
(Notes 1 and 2)  
A(pk)  
YWW  
RPCJ  
10 x 1000 µsec  
(−25°C Initial Temperature)  
8 x 20 µsec  
RPCJ = Specific Device Code  
I
"80  
"250  
"150  
"100  
PPS1  
PPS2  
PPS3  
PPS4  
Y
= Year  
I
I
I
WW  
= Work Week  
10 x 160 µsec  
10 x 560 µsec  
Maximum Non−Repetitive Rate of  
Change of On−State Current  
Double Exponential Waveform,  
R = 1.0, L = 1.5 µH, C = 1.67 µF,  
di/dt  
"100  
A/µs  
ORDERING INFORMATION  
Device  
MMT08B310T3  
Package  
Shipping†  
I
pk  
= 110A  
12mm Tape and Reel  
(2.5K/Reel)  
SMB  
1. Allow cooling before testing second polarity.  
2. Measured under pulse conditions to reduce heating.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
October, 2003 − Rev. 0  
MMT08B310T3/D  

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