5秒后页面跳转
MMT08B260T3G PDF预览

MMT08B260T3G

更新时间: 2024-01-25 20:03:23
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管高压
页数 文件大小 规格书
5页 60K
描述
Thyristor Surge Protectors High Voltage Bidirectional TSPD

MMT08B260T3G 数据手册

 浏览型号MMT08B260T3G的Datasheet PDF文件第2页浏览型号MMT08B260T3G的Datasheet PDF文件第3页浏览型号MMT08B260T3G的Datasheet PDF文件第4页浏览型号MMT08B260T3G的Datasheet PDF文件第5页 
MMT08B260T3  
Preferred Devices  
Thyristor Surge Protectors  
High Voltage Bidirectional TSPD  
These Thyristor Surge Protective devices (TSPD) prevent  
overvoltage damage to sensitive circuits by lightning, induction and  
power line crossings. They are breakover−triggered crowbar  
protectors. Turn−off occurs when the surge current falls below the  
holding current value.  
http://onsemi.com  
BIDIRECTIONAL TSPD  
80 AMP SURGE, 260 VOLTS  
(
)
Secondary protection applications for electronic telecom equipment  
at customer premises.  
Features  
MT1  
MT2  
High Surge Current Capability: 80 Amps 10 x 1000 msec, for  
Controlled Temperature Environments  
The MMT08B260T3 is used to help equipment meet various  
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,  
IEC 950, UL 1459 & 1950 and FCC Part 68.  
Bidirectional Protection in a Single Device  
Little Change of Voltage Limit with Transient Amplitude or Rate  
Freedom from Wearout Mechanisms Present in Non−Semiconductor  
Devices  
Fail−Safe, Shorts When Overstressed, Preventing Continued  
Unprotected Operation  
SMB  
(No Polarity)  
(Essentially JEDEC DO−214AA)  
CASE 403C  
MARKING DIAGRAM  
Surface Mount Technology (SMT)  
Indicates UL Registered − File #E210057  
Pb−Free Package is Available  
AYWW  
RPCG G  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
V
Off−State Voltage − Maximum  
V
200  
DM  
Maximum Pulse Surge Short Circuit Current  
Non−Repetitive  
A(pk)  
A
Y
WW  
= Assembly Location  
= Year  
= Work Week  
Double Exponential Decay Waveform  
(−25°C Initial Temperature) (Notes 1 & 2)  
2 x 10 msec  
RPCG = Device Code  
I
250  
250  
150  
150  
100  
100  
80  
PPS1  
PPS2  
PPS3  
PPS4  
PPS5  
PPS6  
PPS7  
G
= Pb−Free Package  
I
I
I
I
I
I
8 x 20 msec  
10 x 160 msec  
10 x 360 msec  
10 x 560 msec  
10 x 700 msec  
10 x 1000 msec  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
Non−Repetitive Peak On−State Current  
60 Hz Full Sign Wave  
I
32  
A(pk)  
TSM  
MMT08B260T3  
MMT08B260T3G  
SMB  
2500 Tape & Reel  
2500 Tape & Reel  
Maximum Non−Repetitive Rate of Change of  
On−State Current Exponential Waveform,  
di/dt  
300  
A/ms  
SMB  
(Pb−Free)  
I
< 100A  
pk  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. Allow cooling before testing second polarity.  
Preferred devices are recommended choices for future use  
2. Measured under pulse conditions to reduce heating.  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 3  
MMT08B260T3/D  
 

与MMT08B260T3G相关器件

型号 品牌 描述 获取价格 数据表
MMT08B310T3 ONSEMI Thyristor Surge Protectors

获取价格

MMT08B310T3_05 ONSEMI Thyristor Surge Protectors High Voltage Bidirectional TSPD

获取价格

MMT08B310T3G ONSEMI Thyristor Surge Protectors High Voltage Bidirectional TSPD

获取价格

MMT08B350T3 ONSEMI Thyristor Surge Protectors High Voltage Bidirectional TSPD

获取价格

MMT08B350T3G ONSEMI Thyristor Surge Protectors High Voltage Bidirectional TSPD

获取价格

MMT-101-01-F-SH SAMTEC Board Connector, 1 Contact(s), 1 Row(s), Male, Right Angle, Surface Mount Terminal,

获取价格