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MMT05A260T3G

更新时间： 2024-02-06 00:33:04
品牌 Logo 应用领域
安森美 - ONSEMI 触发装置硅浪涌保护器光电二极管高压
页数 文件大小 规格书
7页 62K
描述
Thyristor Surge Protectors High Voltage Bidirectional TSPD

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MMT05A260T3G 技术参数

是否Rohs认证：符合生命周期：Obsolete
包装说明：CASE 403D-02, SMA, 2 PIN针数：2
Reach Compliance Code：not_compliantHTS代码：8541.30.00.80
风险等级：5.75Is Samacsys：N
其他特性：UL RECOGNIZED最大转折电压：320 V
配置：SINGLE最大断态直流电压：200 V
JESD-30 代码：R-PDSO-C2JESD-609代码：e3
元件数量：1端子数量：2
最高工作温度：125 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified子类别：Silicon Surge Protectors
表面贴装：YES端子面层：Tin (Sn)
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED触发设备类型：SILICON SURGE PROTECTOR
Base Number Matches：1

MMT05A260T3G 数据手册

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MMT05A230T3,  
MMT05A260T3,  
MMT05A310T3  
Preferred Devices  
Thyristor Surge Protectors  
High Voltage Bidirectional TSPD  
http://onsemi.com  
These Thyristor Surge Protective devices (TSPD) prevent  
overvoltage damage to sensitive circuits by lightning, induction and  
power line crossings. They are breakover−triggered crowbar  
protectors. Turn−off occurs when the surge current falls below the  
holding current value.  
BIDIRECTIONAL TSPD  
50 AMP SURGE  
265 thru 365 VOLTS  
Secondary protection applications for electronic telecom equipment  
at customer premises.  
• High Surge Current Capability: 50 Amps 10 x 1000 μsec; for  
Controlled Temperature Environments in the SMA package  
MT1  
MT2  
• The MMT05A230T3 Series is used to help equipment meet various  
regulatory requirements including: Telcordia 1089, ITU K.20 &  
K.21, IEC 950 and FCC Part 68  
• Bidirectional Protection in a Single Device  
• Little Change of Voltage Limit with Transient Amplitude or Rate  
• Freedom from Wearout Mechanisms Present in Non−Semiconductor  
Devices  
SMA  
(No Polarity)  
CASE 403D  
• Fail−Safe, Shorts When Overstressed, Preventing Continued  
Unprotected Operation  
MARKING DIAGRAM  
• Surface Mount Technology (SMT)  
•
Indicates UL Registered − File #E210057  
xxx  
AYWWG  
• Pb−Free Packages are Available  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
xxx = Specific Device Code  
Rating  
Symbol  
Value  
Unit  
A
Y
= Assembly Location  
= Year  
Off−State Voltage − Maximum  
V
Volts  
DM  
MMT05A230T3  
MMT05A260T3  
MMT05A310T3  
"170  
"200  
"270  
WW = Work Week  
G
= Pb−Free Package  
Maximum Pulse Surge Short Circuit  
Current Non−Repetitive  
Double Exponential Decay Waveform  
(Notes 1 and 2)  
A(pk)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
8 x 20 msec  
10 x 160 msec  
10 x 560 msec  
10 x 1000 msec  
I
"150  
"100  
"70  
PPS1  
PPS2  
PPS3  
PPS4  
I
I
I
Preferred devices are recommended choices for future use  
and best overall value.  
"50  
Maximum Non−Repetitive Rate of  
Change of On−State Current Double  
Exponential Waveform,  
di/dt  
"100  
A/ms  
I
= 50 A, P = 15 ms  
W
PK  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. Allow cooling before testing second polarity.  
2. Measured under pulse conditions to reduce heating.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 5  
MMT05A230T3/D  
 
1234567

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