MMBT3904

更新时间： 2024-01-29 18:32:57

品牌	Logo	应用领域
安森美 - ONSEMI		晶体放大器晶体管开关光电二极管
页数	文件大小	规格书
12页	299K
描述
GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

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技术参数
数据手册

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MMBT3904 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.58
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MMBT3904 数据手册

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MMBT3904WT1/D

SEMICONDUCTOR TECHNICAL DATA

NPN and PNP Silicon

These transistors are designed for general purpose amplifier applications. They are

housed in the SOT–323/SC–70 which is designed for low power surface mount

applications.

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Symbol

Value

Unit

GENERAL PURPOSE

AMPLIFIER TRANSISTORS

SURFACE MOUNT

MMBT3904WT1

MMBT3906WT1

CEO

CBO

EBO

–40

Vdc

Collector–Base Voltage

Emitter–Base Voltage

MMBT3904WT1

MMBT3906WT1

–40

Vdc

MMBT3904WT1

MMBT3906WT1

6.0

–5.0

Collector Current — Continuous MMBT3904WT1

MMBT3906WT1

200

–200

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

CASE 419–02, STYLE 3

SOT–323/SC–70

(1)

Total Device Dissipation

150

= 25°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

DEVICE MARKING

833

°C/W

°C

T , T

J stg

–55 to +150

MMBT3904WT1 = AM

MMBT3906WT1 = 2A

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

(2)

Collector–Emitter Breakdown Voltage

Vdc

(BR)CEO

(I = 1.0 mAdc, I = 0)

MMBT3904WT1

MMBT3906WT1

–40

—

(I = –1.0 mAdc, I = 0)

Collector–Base Breakdown Voltage

(I = 10 Adc, I = 0)

Vdc

(BR)CBO

MMBT3904WT1

MMBT3906WT1

–40

—

(I = –10 Adc, I = 0)

Emitter–Base Breakdown Voltage

(I = 10 Adc, I = 0)

(BR)EBO

MMBT3904WT1

MMBT3906WT1

6.0

–5.0

—

(I = –10 Adc, I = 0)

Base Cutoff Current

nAdc

= 30 Vdc, V

= –30 Vdc, V

= 3.0 Vdc)

MMBT3904WT1

MMBT3906WT1

—

–50

= –3.0 Vdc)

Collector Cutoff Current

CEX

= 30 Vdc, V

= –30 Vdc, V

= 3.0 Vdc)

MMBT3904WT1

MMBT3906WT1

—

–50

= –3.0 Vdc)

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.

2. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%.

Thermal Clad is a trademark of the Bergquist Company.

M_Mot_oo_tor_ro_ol_la_a,S_Inm_c.a₁₉ll₉–₆Signal Transistors, FETs and Diodes Device Data

12 3 4 5 6 7...12

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