MBR2030CTL
Preferred Device
SWITCHMODE Dual
Schottky Power Rectifier
The MBR2030CTL employs the Schottky Barrier principle in a
large area metal−to−silicon power diode. State−of−the−art geometry
features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for use as rectifiers in very
low−voltage, high−frequency switching power supplies, free wheeling
diodes and polarity protection diodes.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
Features
20 AMPERES
30 VOLTS
• Pb−Free Package is Available*
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop (0.4 Max @ 10 A, T = 150°C)
C
• 150°C Operating Junction Temperature
1
• Matched Dual Die Construction (10 A per Leg or 20 A per Package)
• High Junction Temperature Capability
2, 4
3
• High dv/dt Capability
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guardring for Stress Protection
• Epoxy Meets UL 94, V−0 @ 0.125 in
MARKING
DIAGRAM
4
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
TO−220AB
CASE 221A
PLASTIC
AY WW
B2030
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
1
2
3
A
Y
= Assembly Location
= Year
WW
= Work Week
B2030 = Device Code
ORDERING INFORMATION
Device
Package
Shipping
MBR2030CTL
TO−220
50 Units/Tube
50 Units/Tube
MBR2030CTLG
TO−220
(Pb−Free)
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
September, 2004 − Rev. 2
MBR2030CTL/D