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2N7002LT3 PDF预览

2N7002LT3

更新时间: 2024-01-13 02:57:34
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号场效应晶体管光电二极管
页数 文件大小 规格书
4页 62K
描述
Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23

2N7002LT3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT-23
包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.55配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):0.075 A
最大漏源导通电阻:7.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):5 pFJEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

2N7002LT3 数据手册

 浏览型号2N7002LT3的Datasheet PDF文件第2页浏览型号2N7002LT3的Datasheet PDF文件第3页浏览型号2N7002LT3的Datasheet PDF文件第4页 
2N7002L  
Small Signal MOSFET  
60 V, 115 mA, N−Channel SOT−23  
Features  
Pb−Free Packages are Available  
http://onsemi.com  
MAXIMUM RATINGS  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
Rating  
Drain−Source Voltage  
Symbol  
Value  
60  
Unit  
Vdc  
V
DSS  
7.5 W @ 10 V,  
60 V  
115 mA  
500 mA  
Drain−Gate Voltage (R = 1.0 MW)  
V
DGR  
60  
Vdc  
GS  
Drain Current  
− Continuous T = 25°C (Note 1)  
− Continuous T = 100°C (Note 1)  
I
I
±115  
±75  
±800  
mAdc  
D
D
N−Channel  
C
3
I
DM  
C
− Pulsed (Note 2)  
Gate−Source Voltage  
− Continuous  
V
±20  
±40  
Vdc  
Vpk  
GS  
V
GSM  
− Non−repetitive (t 50 ms)  
p
1
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
2
MARKING DIAGRAM  
& PIN ASSIGNMENT  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
3
Drain  
3
Total Device Dissipation FR−5 Board  
P
D
225  
1.8  
mW  
mW/°C  
(Note 3) T = 25°C  
A
1
Derate above 25°C  
2
702  
W
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R
556  
300  
°C/W  
q
JA  
SOT−23  
CASE 318  
STYLE 21  
P
mW  
mW/°C  
D
1
2
Alumina Substrate,(Note 4) T = 25°C  
Derate above 25°C  
A
Gate  
Source  
2.4  
702  
W
= Device Code  
= Work Week  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R
417  
°C/W  
°C  
q
JA  
T , T  
J
55 to  
stg  
+150  
ORDERING INFORMATION  
1. The Power Dissipation of the package may result in a lower continuous drain  
current.  
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.  
3. FR−5 = 1.0 x 0.75 x 0.062 in.  
Device  
Package  
Shipping  
2N7002LT1  
2N7002LT3  
2N7002LT1G  
2N7002LT3G  
3000 Tape & Reel  
10,000 Tape & Reel  
3000 Tape & Reel  
10,000 Tape & Reel  
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.  
SOT−23  
SOT−23  
(Pb−free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
July, 2004 − Rev. 2  
2N7002L/D  
 

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