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2N7002KT3G PDF预览

2N7002KT3G

更新时间： 2024-01-10 04:45:24
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
6页 103K
描述
Small Signal MOSFET 60 V, 380 mA, Single, N−Channel, SOT−23

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2N7002KT3G 技术参数

是否无铅： 不含铅生命周期：End Of Life
零件包装代码：SOT-23包装说明：LEAD FREE, CASE 318-08, TO-236, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.17
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：60 V
最大漏极电流 (Abs) (ID)：0.32 A最大漏极电流 (ID)：0.32 A
最大漏源导通电阻：1.6 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-236ABJESD-30 代码：R-PDSO-G3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：0.3 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

2N7002KT3G 数据手册

 浏览型号2N7002KT3G的Datasheet PDF文件第2页浏览型号2N7002KT3G的Datasheet PDF文件第3页浏览型号2N7002KT3G的Datasheet PDF文件第4页浏览型号2N7002KT3G的Datasheet PDF文件第5页浏览型号2N7002KT3G的Datasheet PDF文件第6页 
2N7002K, 2V7002K  
Small Signal MOSFET  
60 V, 380 mA, Single, N−Channel, SOT−23  
Features  
• ESD Protected  
• Low R  
DS(on)  
http://onsemi.com  
• Surface Mount Package  
• 2V Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
1.6 W @ 10 V  
2.5 W @ 4.5 V  
60 V  
380 mA  
SIMPLIFIED SCHEMATIC  
Applications  
• Low Side Load Switch  
• Level Shift Circuits  
Gate  
1
• DC−DC Converter  
3
Drain  
• Portable Applications i.e. DSC, PDA, Cell Phone, etc.  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Source  
2
Rating  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
V
DSS  
(Top View)  
V
GS  
20  
V
MARKING DIAGRAM  
& PIN ASSIGNMENT  
Drain  
Drain Current (Note 1)  
Steady State 1 sq in Pad  
I
D
mA  
T = 25°C  
A
380  
270  
3
A
T = 85°C  
3
Drain Current (Note 2)  
I
mA  
D
1
Steady State Minimum Pad  
T = 25°C  
A
320  
230  
A
2
T = 85°C  
704 MG  
SOT−23  
CASE 318  
STYLE 21  
Power Dissipation  
Steady State 1 sq in Pad  
Steady State Minimum Pad  
P
mW  
G
D
420  
300  
1
2
Gate  
Source  
Pulsed Drain Current (t = 10 ms)  
I
1.5  
A
p
DM  
704  
M
= Specific Device Code*  
= Date Code*  
= Pb−Free Package  
Operating Junction and Storage  
Temperature Range  
T , T  
−55 to  
+150  
°C  
J
STG  
G
(Note: Microdot may be in either location)  
Source Current (Body Diode)  
I
S
300  
260  
mA  
*Specific Device Code, Date Code or overbar  
orientation and/or location may vary depend-  
ing upon manufacturing location. This is a  
representation only and actual devices may  
not match this drawing exactly.  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
°C  
L
Gate−Source ESD Rating  
(HBM, Method 3015)  
ESD  
2000  
V
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu.  
2. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
2N7002KT1G  
SOT−23  
3000 / Tape & Reel  
(Pb−Free)  
2V7002KT1G  
SOT−23  
3000 / Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
February, 2013 − Rev. 11  
2N7002K/D  
 
123456

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